Investigation of the relaxation behavior of Si1−xCx alloys during epitaxial UHV-CVD growth

Ostermay, Ina; Kammler, Thorsten; Naumann, Andreas; Bartha, Johann W.; Kücher, Peter

doi:10.1016/j.mseb.2008.10.011

Cited by 4 publications

(9 citation statements)

References 11 publications

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“…2a. Similar defects are also reported in Si:C layers grown using RPCVD by Hartmann et al 19 and in UHV-CVD by Ostermay et al 17 Additionally, these defects are also reported in CVD growth of pure Si layers using higher order silane precursors. 22,23 Although high growth rates are essential to achieve better C substitutionality, [17][18][19][20][21] the occurrence of these defects preclude the usage of high growth rates in single step deposition.…”

Section: Materials Quality Of Si:c Layers Grown Using Single Step Dep...supporting

confidence: 79%

“…Similar defects are also reported in Si:C layers grown using RPCVD by Hartmann et al 19 and in UHV-CVD by Ostermay et al 17 Additionally, these defects are also reported in CVD growth of pure Si layers using higher order silane precursors. 22,23 Although high growth rates are essential to achieve better C substitutionality, [17][18][19][20][21] the occurrence of these defects preclude the usage of high growth rates in single step deposition. Fortunately, the use of a CDE process which alternates between deposition and etching steps for a specified number of cycles, aids in the removal of these defects 10,11 and helps in achieving a better material quality as shown in Fig.…”

Section: Materials Quality Of Si:c Layers Grown Using Single Step Dep...supporting

confidence: 79%

“…Previous studies have demonstrated the use of high growth rates in improving the C sub content in Si:C epitaxial layers. [17][18][19][20][21] An overview table showing the maximum C sub contents resulting from high growth rates provided by higher order silanes is provided in Table I. However, Si:C films grown using the single step deposition are also ridden with defects in the form of localized inclusions, whose density increases with the C content and/or layer growth rate.…”

Section: Materials Quality Of Si:c Layers Grown Using Single Step Dep...mentioning

confidence: 99%

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Local Arrangement of Substitutional C Atoms and the Thermal Stability of Epitaxial Si:C(P) Grown by CVD

Dhayalan¹,

Nuytten²,

Loo³

et al. 2017

ECS J. Solid State Sci. Technol.

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Si:C alloys are potential candidates for source-drain stressor applications meant for n-type FinFETs. To function as an effective stressor, the substitutional C concentration (Csub) must be ≥ 1.5%. Increasing the C content to achieve high strain results in local arrangement of a fraction of Csub atoms in the form of third nearest neighbors (3 nn). We investigate if this 3 nn arrangement can be controlled by choosing optimal growth conditions and we also explore if this arrangement has an impact on the thermal stability of the Si:C layers, if they are subjected to high temperature processing. For a given Csub concentration, the use of a cyclic deposition and etching scheme reduces the 3 nn distribution in comparison to a single step deposition process. The 3 nn concentration also varied with respect to the choice of the Si precursor. Faster growth rates and adding in-situ doping did not significantly influence the 3 nn concentration for disilane, whereas the 3 nn concentration was considerably lower if trisilane was used as Si precursor. For the Si:C layers with comparable crystalline quality, the Csub loss during thermal annealing did not show a regular trend with respect to 3 nn distribution.

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Section: Materials Quality Of Si:c Layers Grown Using Single Step Dep...supporting

confidence: 79%

Section: Materials Quality Of Si:c Layers Grown Using Single Step Dep...supporting

confidence: 79%

Section: Materials Quality Of Si:c Layers Grown Using Single Step Dep...mentioning

confidence: 99%

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Local Arrangement of Substitutional C Atoms and the Thermal Stability of Epitaxial Si:C(P) Grown by CVD

Dhayalan¹,

Nuytten²,

Loo³

et al. 2017

ECS J. Solid State Sci. Technol.

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show abstract

“…The different nature of the facets and crystallinity observed by Cherkashin et al, and the current work may be explained by differences in the growth rate between the defective amorphous area within the pyramid and non-defective area, outside. Ostermay et al [18], found similar defects in the Si:C epitaxial layers grown by UHV-CVD and attributed them to the interruption of lattice by cubic-SiC precipitates formed during the growth. However, the studies of Goesele et al [26], suggest that the precipitation of C into a SiC precipitate at these growth temperatures will be difficult due to the difference in the interface energy between the SiC and the Si lattice.…”

Section: Impact Of C Incorporation On the Materials Qualitymentioning

confidence: 83%

“…A couple of reports pertaining to the use of disilane to grow Si:C layers (in both gas-source Molecular Beam Epitaxy (MBE) as well as Chemical Vapor Deposition (CVD)), are already available [12][13][14][15][16][17][18][19]. Recently, Hartmann et al [19] have demonstrated a selective process for Si:C and Si:C:P deposition using disilane.…”

Section: Introductionmentioning

confidence: 99%