Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains

Circuit Modeling of Single-Event Transient Pulse Stretching in Digital CMOS

“…Note the identical results for the initial pulse being positive or negative. This agrees with measurements as in [1] and [2]. Note also that subsequent pulses from the burst stretch less than the initial pulse.…”

“…8. These are in good agreement with measurements, as in [1] and [2], of increased pulse stretching with increased signal load. Note the nearly identical results for the initial pulse being positive or negative, with reduced pulse stretching for subsequent pulses.…”

“…The results presented here are based on industry standard, compact MOS models for a widely-used 90 nm bulk CMOS process, in HSPICE format, as provided by the manufacturer to integrated circuit designers in process design kits (PDKs). Only one parasitic capacitance, as suggested in [5], has been added to each transistor; this keeps the simulation model simple while recreating key effects described in previous works [1], [2], [11], and [12].…”

A single event transient detector in SRAM-based FPGAs

“…As technology shrinks and operating frequencies increase, SETs are an ever-increasing issue for integrated circuits (ICs) adopted in safety-critical applications [3,4,5,6].…”

Effects of Ionizing Radiation on Digital Single Event Transients in a 180-nm Fully Depleted SOI Process

“…Further work presented last year [5]- [7] showed that SET broadening effects are quite complex and intractably dependent on the fabrication technology, transistor layout and engineering, and circuit operating conditions. Last year, we reported the first experimental data on SETs characterized in MITLL (MIT Lincoln Laboratory) 180-nm FDSOI CMOS process using an on-chip SET measurement circuit [7].…”