Investigation of the practical output load impedance sensitivity of a 10 W GaN device subject to gate bias variation

Gecan, Dragan; Olavsbraten, Morten; Gjertsen, Karl M.

doi:10.1109/pawr.2016.7440160

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Investigation of the practical output load impedance sensitivity of a 10 W GaN device subject to gate bias variation

Cited by 3 publications

References 4 publications

Bandwidth Reduction for Supply Modulated RF PAs Using Power Envelope Tracking

Bandwidth Reduction for Supply Modulated RF PAs Using Power Envelope Tracking

Photovoltaic Bias for Depletion-Mode Devices in Low-Noise Amplifier Applications [Application Notes]

Comprehensive investigation of a dynamic gate biasing technique for linearity improvement based on measurement of a 10 W GaN HEMT power amplifier

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