2023
DOI: 10.1016/j.physc.2023.1354223
|View full text |Cite
|
Sign up to set email alerts
|

Investigation of the Pauli paramagnetic effect in systematically tuned NbN thin films

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
1
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
3

Relationship

1
2

Authors

Journals

citations
Cited by 3 publications
(3 citation statements)
references
References 35 publications
0
1
0
Order By: Relevance
“…It is worth noting that the critical transition temperature T c of NbN films and nanowires can be tuned over a wide range by the growth parameters [19,25], such as the argon/nitrogen ratio and the chamber pressure, during sputtering. Here we investigate the physical properties of NbN system with T c at around 8.8 K. In figure 1(d), we show a typical set of resistance R data of sample S-1 under the magnetic field H ∥ y.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…It is worth noting that the critical transition temperature T c of NbN films and nanowires can be tuned over a wide range by the growth parameters [19,25], such as the argon/nitrogen ratio and the chamber pressure, during sputtering. Here we investigate the physical properties of NbN system with T c at around 8.8 K. In figure 1(d), we show a typical set of resistance R data of sample S-1 under the magnetic field H ∥ y.…”
Section: Resultsmentioning
confidence: 99%
“…High-quality NbN films were prepared by dc reactive magnetron sputtering on high-resistivity Si substrates at room temperature. The details of the film growth and characterization have been reported previously [19]. The electrodes for the transport measurements were patterned using direct writing photo-lithography (PL) machine (DWL66+).…”
Section: Nbn Nanowire Fabricationmentioning
confidence: 99%
“…Firstly, we deposited the highquality NbN films with thickness of 9 nm on Si substrates by dc reactive magnetron sputtering. Details of the film growth and characterization have been reported previously [24]. In order to increase the normal-state resistance of the nanowires and thus obtain a high probability of the occurrence of QPS [8], we use Si substrates which do not match the NbN lattice and a low sputtering temperature (room temperature) to guarantee a high degree of disorder in the NbN SC films.…”
Section: Nbn Nanowire Fabricationmentioning
confidence: 99%