Investigation of the Optical Properties of CdBr&amp;lt;sub&amp;gt;2&amp;lt;/sub&amp;gt;

Salehi, Hadi; Asareh, Nastaran

doi:10.4236/opj.2011.11001

Cited by 7 publications

(2 citation statements)

References 6 publications

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“…It is well known that, by decreasing the size of the channel (generally less than five nm), the size quantization causes that the charge density is peaked near the middle of the channel and potential energy is distributed over the channel based on the boundary condition. 19,22 The electron distribution on samples per Cm 3 without and with LDA effects is shown in Fig. 4 and Fig.…”

Section: Resultsmentioning

confidence: 99%

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Electron transport through nano-MOSFET in presence of electron-electron interaction

Simchi

Heidarisaani²,

Esmaeilzadeh

2013

AIP Advances

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We investigate the effect of electron-electron interaction on voltage distribution, charge distribution and current-voltage curve of two dimensional nano-MOSFETs with dimension equal to 1 × 1 nm2, 3 × 3 nm2, and 6 × 6 nm2 by using non-equilibrium Green function method. It is shown that the turn on voltage increases by decreasing the size of sample because of size quantization. Also we show that for a critical drain-source voltage a negative resistance is seen at current-voltage curve of 1 × 1 nm2 sample because of electron-electron interaction, and in consequence it can tolerate lower gate voltage in real practical applications

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Section: Resultsmentioning

confidence: 99%

“…We develop our previous calculation method 19,20 from one dimensional to two dimensional FDM and also use NEGF method which is introduced by Ref. 13.…”

Section: Calculation Methodsmentioning

confidence: 99%

Electron transport through nano-MOSFET in presence of electron-electron interaction

Simchi

Heidarisaani²,

Esmaeilzadeh

2013

AIP Advances

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Ultra‐Long Van Der Waals CdBr₂ Micro/Nanobelts

et al. 2020

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BN-MoS 2) 1D van der Waals heterostructure with a diameter of only 5 nm, which may be the smallest metal-insulator-semiconductor device proven to date. [6] In addition, all of these prior works demonstrated the potential of 1D materials as high-current density conductors. [7] First-principles calculations expose that ultra-long ballistic phonon transmissions are generated by highly focused longitudinal phonons that propagate along one dimension, [8] and thermal conductivity may diverge under 1D limit conditions. [9] Therefore, synthesizing and studying 1D materials are conducive to our understanding of their unique thermal, optical, and electrical properties, thus further promoting various applications of such materials. At present, the growth of 1D van der Waals materials is mainly conducted by chemical vapor deposition (CVD) with the help of CNTs or BNNTs. CVD is an effective strategy for synthesizing layered materials with excellent electro-optical properties. However, large temperature differences (>10 °C) cause growth kinetics to deviate from equilibrium, and the synthesized layered materials usually have a lot of defects and grain boundaries. [10] According to the classical band theory, a large number of defects in a crystal will generate deep levels or trap states inevitably, which usually limits the carrier mobility. [11] Simultaneously, the halogen element is usually not a stable reactant for the CVD method, which also makes it unsuitable for the growth of binary van der Waals materials containing halogen atoms. Therefore, there are still many challenges for synthesizing high-quality and large-size single-crystal van der Waals materials in this method, especially for those containing halogen elements. [10,12] Alternatively, van der Waals materials with large crystal size and high crystal quality can be obtained by mechanical exfoliation, but it is difficult to get them controlled in one dimension. Therefore, for the growth of large-scale 1D van der Waals materials, a new and efficient synthesis method is urgently needed. Here, we propose a new method that combines organic liquid phase synthesis and post-annealing. With the singlechain structure of CdBr 2 •4H 2 O, we successfully synthesized the high-quality and large-sized CdBr 2 van der Waals micro/nanobelts. Compared with CVD, this synthetic method reported in this article has shown two obvious advantages in growing highquality, large-size 1D van der Waals materials. First, according to the crystal growth thermodynamics and defect formation mechanism, [13] there is almost no temperature difference (<0.1 °C) between the crystal and solution. Liquid phase synthesis can Recently, 1D van der Waals materials with appealing optoelectronic properties different from 2D layered materials have attracted widespread attention. However, the existing methods are incapable of growing the high-quality and large-size 1D van der Waals materials to a certain extent. Here, a new method of organic liquid phase synthesis followed by annealing is proposed, which overcomes th...

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Pb-additive Se-Te-In nano-chalcogenide thin films: preparation, morphological, optical analysis and material perspective for phase-change memory devices

Anjali,

Patial,

Sharma

et al. 2023

J Mater Sci: Mater Electron

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Investigation of the Optical Properties of CdBr<sub>2</sub>

Cited by 7 publications

References 6 publications

Electron transport through nano-MOSFET in presence of electron-electron interaction

Electron transport through nano-MOSFET in presence of electron-electron interaction

Ultra‐Long Van Der Waals CdBr₂ Micro/Nanobelts

Pb-additive Se-Te-In nano-chalcogenide thin films: preparation, morphological, optical analysis and material perspective for phase-change memory devices

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Investigation of the Optical Properties of CdBr&lt;sub&gt;2&lt;/sub&gt;

Cited by 7 publications

References 6 publications

Electron transport through nano-MOSFET in presence of electron-electron interaction

Electron transport through nano-MOSFET in presence of electron-electron interaction

Ultra‐Long Van Der Waals CdBr2 Micro/Nanobelts

Pb-additive Se-Te-In nano-chalcogenide thin films: preparation, morphological, optical analysis and material perspective for phase-change memory devices

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Investigation of the Optical Properties of CdBr<sub>2</sub>

Ultra‐Long Van Der Waals CdBr₂ Micro/Nanobelts