Electron transport through nano-MOSFET in presence of electron-electron interaction

Abstract

We investigate the effect of electron-electron interaction on voltage distribution, charge distribution and current-voltage curve of two dimensional nano-MOSFETs with dimension equal to 1 × 1 nm2, 3 × 3 nm2, and 6 × 6 nm2 by using non-equilibrium Green function method. It is shown that the turn on voltage increases by decreasing the size of sample because of size quantization. Also we show that for a critical drain-source voltage a negative resistance is seen at current-voltage curve of 1 × 1 nm2 sample because of electron-electron interaction, and in consequence it can tolerate lower gate voltage in real practical applications

The frequency dependent electrical properties of MIS structures with Mn-doped complexed interfacial layer

“…Understanding these properties is of great importance in many application areas. If an interfacial layer is placed between the metal and the semiconductor, the electrical properties of device change [4]. This interfacial layer turns the material into metal/insulator(oxide)/semiconductor [5][6][7][8].…”