2018
DOI: 10.7567/jjap.57.04fs04
|View full text |Cite
|
Sign up to set email alerts
|

Investigation of the open-circuit voltage in wide-bandgap InGaP-host InP quantum dot intermediate-band solar cells

Abstract: To analyze the open-circuit voltage (V oc ) in intermediate-band solar cells, we investigated the current-voltage characteristics in wide-bandgap InGaP-based InP quantum dot (QD) solar cells. From the temperature dependence of the current-voltage curves, we show that the V oc in InP QD solar cells increases with decreasing temperature. We use a simple diode model to extract V oc at the zero-temperature limit, V 0 , and the temperature coefficient C of the solar cells. Our results show that, while the C of InP … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2

Citation Types

0
4
0

Year Published

2018
2018
2024
2024

Publication Types

Select...
4
1

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(4 citation statements)
references
References 32 publications
(61 reference statements)
0
4
0
Order By: Relevance
“…This is necessary to suppress the voltage reduction in the QD solar cells. 14,21,35) The suppressed thermal escape should be confirmed in future two-step photon absorption experiments. Finally, to check the impact of the host absorber thickness on the QD solar cells, we investigated the photocarrier generation at QDs in the InP=InGaP QD solar cells using PL measurements.…”
Section: Resultsmentioning
confidence: 83%
See 1 more Smart Citation
“…This is necessary to suppress the voltage reduction in the QD solar cells. 14,21,35) The suppressed thermal escape should be confirmed in future two-step photon absorption experiments. Finally, to check the impact of the host absorber thickness on the QD solar cells, we investigated the photocarrier generation at QDs in the InP=InGaP QD solar cells using PL measurements.…”
Section: Resultsmentioning
confidence: 83%
“…1,5,7) The effect of suppressed thermal carrier extraction on the V oc is also under study. 35) Figure 4(a) shows the EQE under varying applied bias voltages of the InP QD solar cells with a thick front i-InGaP layer. The results reveal that the EQE increases with decreasing bias voltage, which is equivalent to increasing reverse-bias voltage.…”
Section: Resultsmentioning
confidence: 99%
“…Many such technologies employ multi-bandgap and other quantum engineering approaches to circumvent the shortcomings of the single-junction devices that were considered in calculating this limit [5,[35][36][37][38][39][40][41][42][43][44][45]. Alternative approaches include hot carrier devices, which increase the photovoltage by harvesting charge carriers before they can thermalise [46,47], and the use of concentrator modules to increase the amount of light collected by a solar converter, which can lead to the required efficiencies but comes at increased cost and complexity, and it causes the devices to operate at high temperatures [48][49][50].…”
Section: Discussionmentioning
confidence: 99%
“…These are currently at the research stage, and typically employ e.g. multi-bandgap and other quantum engineering approaches to circumvent the shortcomings of the single junction devices that were considered in calculating this limit [5,[35][36][37][38][39][40][41][42][43][44][45].…”
Section: Discussionmentioning
confidence: 99%