2005
DOI: 10.1016/j.jeurceramsoc.2004.07.033
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Investigation of the new piezoelectric system (1−x)Bi(MgTi)0.5O3–xPbTiO3

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Cited by 40 publications
(32 citation statements)
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“…According to literature, the piezoelectric properties of BMT-PT depend strongly on processing route. [13][14][15] BMT-PT can be obtained with high d 33 ͑225 pC/N͒ and large dielectric breakdown field using hot isostatic pressing. 13 Conventional processing leads to problems with respect to high conductivity 14,15 and low dielectric breakdown strength ͑5 kV/mm͒.…”
Section: Resultsmentioning
confidence: 99%
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“…According to literature, the piezoelectric properties of BMT-PT depend strongly on processing route. [13][14][15] BMT-PT can be obtained with high d 33 ͑225 pC/N͒ and large dielectric breakdown field using hot isostatic pressing. 13 Conventional processing leads to problems with respect to high conductivity 14,15 and low dielectric breakdown strength ͑5 kV/mm͒.…”
Section: Resultsmentioning
confidence: 99%
“…[13][14][15] BMT-PT can be obtained with high d 33 ͑225 pC/N͒ and large dielectric breakdown field using hot isostatic pressing. 13 Conventional processing leads to problems with respect to high conductivity 14,15 and low dielectric breakdown strength ͑5 kV/mm͒. 14 The piezoelectric coefficient ͑small signal d 33 = 166 pC/ N͒ is lower when using the one-step conventional process without employing MgTiO 3 as a precursor.…”
Section: Resultsmentioning
confidence: 99%
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