Temperature dependence of piezoelectric properties of high-TC Bi(Mg1/2Ti1/2)O3–PbTiO3

Abstract

The temperature dependence of both polarization and electric-field induced strain was investigated for (1−x)Bi(Mg1/2Ti1/2)O3–xPbTiO3 (x=0.36, 0.37, and 0.38), with the morphotropic phase boundary located at x=0.37. Remanent polarization (Pr) and maximum polarization (Pmax) of all compositions are enhanced with increasing temperature up to 175 °C, which is rationalized as improved domain switching due to reduced tetragonality (c/a). The hysteresis during unipolar electric cycling tends to decrease with increase in the fraction of tetragonal phase. Temperature dependent x-ray diffraction demonstrates that switched non-180° domains are stable against thermal depoling above 200 °C, which indicates that the currently investigated materials are suitable for high temperature applications. This promising high-TC piezoelectric is further discussed with reference to oxygen octahedron of the tilted R3c and untilted R3m space groups and the tolerance factor (t).

Structure, piezoelectric, and ferroelectric properties of BaZrO3 substituted Bi(Mg1/2Ti1/2)O3-PbTiO3 perovskite

“…The enhanced piezoelectric property is due to the fact that domains can be easier switched with the reduced tetragonality as the temperature is raised. 4 For the application of piezoelectric actuators, the electric field induced strain is an important parameter. The strain behavior of the piezoelectric ceramics is related to the crystal structure, domain configuration, and so on.…”

Growth of (111) One-Axis-Oriented Bi(Mg1/2Ti1/2)O3 Films on (100)Si Substrates

“…23) In the present study, we attempted to grow (111) one-axisoriented films of a high-pressure phase Bi(Mg 1=2 Ti 1=2 )O 3 on (100)Si substrates. Bi(Mg 1=2 Ti 1=2 )O 3 has been investigated as an end member of the piezoelectric materials, 24,25) and it showed good ferroelectricity in the case of (111)-oriented epitaxial films grown on (111) c SrRuO 3 /(111)SrTiO 3 substrates. 19) …”

Temperature-independent ferroelectric property and characterization of high-TC 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films

“…[9][10][11][12][13] Especially, it was found that the ferroelectric performance of BMT-PT ceramics is enhanced at elevated temperatures, which benefits applications of devices. It is ascribed to improved domain switching mobility which is associated with reduced lattice distortion.…”

“…4 For applications with stability of structure and performance under specific temperature conditions, the search for bismuth-based perovskite ferroelectric materials has stimulated much interest due to the desirable behavior of high T C , such as promising system of BiMeO 3 -PbTiO 3 , where Me could be single trivalent cation (e.g., Sc 3þ , In 3þ , and Fe 3þ ) or a mixed cation combination with an average trivalence (e.g., Zn 1/2 Ti 1/2 and Mg 1/2 Ti 1/2 ). [5][6][7][8][9][10][11][12][13][14][15][16] The improved ferroelectric performances in the BiMeO 3 -PbTiO 3 are ascribed to the strong hybridization between oxygens and A-site Pb/Bi or B-site cations which have a strong ferroelectric activity, such as Ti and Zn. 17,18 Bi substitution plays a unique role in considerable enhancement on both large polarization and high T C .…”

“…It is ascribed to improved domain switching mobility which is associated with reduced lattice distortion. 11 Furthermore, BMT-PT exhibits zero thermal expansion over a wide temperature range (RT $ 500 C), which benefits to reduce thermal shock and enhance the reliability of devices during application with thermal fluctuation. 9 For the consideration as high-T C ferroelectric films, the temperature dependence of ferroelectric properties is most crucial for applications.…”