Investigation of the microstructure of metallic droplets on Ga(AsBi)/GaAs

Sterzer, E.; Knaub, Nikolai; Ludewig, Peter; Straubinger, Rainer; Beyer, Andreas; Volz, Kerstin

doi:10.1016/j.jcrysgro.2014.09.006

Cited by 34 publications

(23 citation statements)

References 16 publications

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“…Further deposit of Bi atoms on surface leads to droplet coalescence. In reference [123], the droplet coalescence process was explained by Ostwald ripening [124]. Formation of Bi droplets indicates that it is a thermodynamically driven process.…”

Section: Bi Dropletsmentioning

confidence: 99%

“…They investigated Bi content column by column and the results indicated that Bi atoms were distributed homogeneously but there were certain areas showing nano-clustering [203]. Sterzer et al discussed the surface droplets for MOCVD grown GaAsBi [123] and pointed out the droplets were formed during growth, and then migrated and merged with the surrounding Bi droplets to form droplet clusters. The droplets could be Bi and/or Ga-Bi metallic droplets, depending on the As/Bi ratio.…”

Section: Surfactant Effect and Segregationmentioning

confidence: 99%

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Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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Abstract:Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

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Section: Bi Dropletsmentioning

confidence: 99%

Section: Surfactant Effect and Segregationmentioning

confidence: 99%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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“…Although even if it is synthesised successfully, the distribution of Bi is sometimes non-uniform, increasing the density of non-radiative recombination centres and therefore affecting their efficiency in lasing operation. The large size and low electronegativity of Bi tend to produce phase separation [4], surface droplets [5, 6], atomic ordering [7–9], nano-scale liquid droplets [10] or Bi clusters during epitaxial growth. The presence of Bi clusters was previously detected by Ciatto et al through a combination of X-ray absorption spectroscopy (XAS), atomic force microscopy and X-ray diffraction (XRD) techniques [11].…”

Section: Introductionmentioning

confidence: 99%

Analysis of Bi Distribution in Epitaxial GaAsBi by Aberration-Corrected HAADF-STEM

et al. 2018

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The Bi content in GaAs/GaAs1 − xBix/GaAs heterostructures grown by molecular beam epitaxy at a substrate temperature close to 340 °C is investigated by aberration-corrected high-angle annular dark-field techniques. The analysis at low magnification of high-angle annular dark-field scanning transmission electron microscopy images, corroborated by EDX analysis, revealed planar defect-free layers and a non-homogeneous Bi distribution at the interfaces and within the GaAsBi layer. At high magnification, the qHAADF analysis confirmed the inhomogeneous distribution and Bi segregation at the GaAsBi/GaAs interface at low Bi flux and distorted dumbbell shape in areas with higher Bi content. At higher Bi flux, the size of the Bi gathering increases leading to roughly equiaxial Bi-rich particles faceted along zinc blende {111} and uniformly dispersed around the matrix and interfaces. FFT analysis checks the coexistence of two phases in some clusters: a rhombohedral pure Bi (rh-Bi) one surrounded by a zinc blende GaAs1 − xBix matrix. Clusters may be affecting to the local lattice relaxation and leading to a partially relaxed GaAsBi/GaAs system, in good agreement with XRD analysis.

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“…Besides a large number of investigations into GaAsBi quantum well structures and some more recent work on quantum dot-like structures313233, detailed studies of GaAsBi nanostrucutres are limited1719343536. Sterzer et al 34.…”

mentioning

confidence: 99%

“…Sterzer et al 34. showed that for static Bi surface droplets the crystalline Bi exhibits preferential lateral ordering with respect to the GaAsBi surface after cool-down.…”

mentioning

confidence: 99%

Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi

Steele

Lewis

Horvat

et al. 2016

Sci Rep

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Herein we investigate a (001)-oriented GaAs1−xBix/GaAs structure possessing Bi surface droplets capable of catalysing the formation of nanostructures during Bi-rich growth, through the vapour-liquid-solid mechanism. Specifically, self-aligned “nanotracks” are found to exist trailing the Bi droplets on the sample surface. Through cross-sectional high-resolution transmission electron microscopy the nanotracks are revealed to in fact be elevated above surface by the formation of a subsurface planar nanowire, a structure initiated mid-way through the molecular-beam-epitaxy growth and embedded into the epilayer, via epitaxial overgrowth. Electron microscopy studies also yield the morphological, structural, and chemical properties of the nanostructures. Through a combination of Bi determination methods the compositional profile of the film is shown to be graded and inhomogeneous. Furthermore, the coherent and pure zincblende phase property of the film is detailed. Optical characterisation of features on the sample surface is carried out using polarised micro-Raman and micro-photoluminescence spectroscopies. The important light producing properties of the surface nanostructures are investigated through pump intensity-dependent micro-PL measurements, whereby relatively large local inhomogeneities are revealed to exist on the epitaxial surface for important optical parameters. We conclude that such surface effects must be considered when designing and fabricating optical devices based on GaAsBi alloys.

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Investigation of the microstructure of metallic droplets on Ga(AsBi)/GaAs

Cited by 34 publications

References 16 publications

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Analysis of Bi Distribution in Epitaxial GaAsBi by Aberration-Corrected HAADF-STEM

Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi

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