Abstract:Strong correlations between crystal perfection of epitaxial structures and size, density and PL features of deposited InAs QDs have been found. Increase of a Sb composition in GaAsSb strain relief layers from 8% to 37% significantly disturbed crystal perfection of epitaxial structures and increased the density of deposited QDs from 2 -2.5 10 10 cm -2 at 8% Sb structure to 7.5 -9.5 10 10 cm -2 at 16% Sb structure. At 37% Sb initial elastic stress was noticeably relaxed ( 40%) while creation of QDs was fully blo… Show more
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