Investigation of the light emission properties and carrier dynamics in dual-wavelength InGaN/GaN multiple-quantum well light emitting diodes

Liu, Lei; Wang, Lei; Liu, Ningyang; Wei, Yang; Ding, Li; Chen, Weihua; Feng, Zhe Chuan; Lee, Yueh-Chien; Ferguson, Ian T.; Hu, Xiaocheng

doi:10.1063/1.4759373

Cited by 34 publications

(21 citation statements)

References 32 publications

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“…On the other hand, GaN based devices with InGaN/GaN MQWs have attracted much interest due to their wide use in optoelectronics such as LED and laser diodes. However, the green InGaN/GaN MQW LEDs are stepping into a bottleneck period because of high threading dislocations caused by lattice constants mismatch and thermal expansion coefficients between GaN based materials and substrates [104] and strong quantum stark effect (QCSE) [105]. All these can cause a heavy "efficiency droop" especially for green GaN based LEDs.…”

Section: Gan Quantum Wells Devicesmentioning

confidence: 99%

Review of GaN Nanostructured Based Devices

Nahhas¹

2018

AJN

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This paper presents a review of recent advances of GaN based nanostructured materials and devices.GaN has gained substantial interest in the research area of wide band gap semiconductors due to its unique electrical, optical and structural properties. GaN nanostructured material exhibits many advantages for nanodevices due to its higher surface-to-volume ratio as compared to thin films. GaN nanostructured material has the ability to absorb ultraviolet (UV) radiation and immense in many optical applications. Recently, GaN nanostructured based devices have gained much attention due to their various potential applications. GaN as nanomaterial have been used in many devices such as UV photodetectors, light emitting diodes, solar cells and transistors. The recent aspects of GaN based devices are presented and discussed. The performance of several devices structures which has been demonstrated on GaN is reviewed. The structural, electrical, and optical properties are also reviewed.

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Section: Gan Quantum Wells Devicesmentioning

confidence: 99%

Review of GaN Nanostructured Based Devices

Nahhas¹

2018

AJN

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“…3 In c-plane InGaN/GaN LEDs, the radiative lifetimes in thicker wells are longer due to reduced overlap of electron and hole wave functions resulting from the large polarization field. 4 Liu et al 5 reported room-temperature radiative decay times as long as 686 ns in high-In-content InGaN/GaN LEDs with 3 nm thick wells, which accordingly exhibited relatively low internal quantum efficiencies (IQEs) of ~11%.…”

Section: Introductionmentioning

confidence: 99%

Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature dependent photoluminescence transients

et al. 2015

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Temperature dependent recombination dynamics in c-plane InGaN light emitting diodes (LEDs) with different well thicknesses, 1.5, 2, and 3 nm, were investigated to determine the active region dimensionality and its effect on the internal quantum efficiencies. It was confirmed for all LEDs that the photoluminescence (PL) transients are governed by radiative recombination at low temperatures while nonradiative recombination dominates at room temperature. At photoexcited carrier densities of 3 -4.5 x 10 16 cm -3 , the room-temperature Shockley-Read-Hall (A) and the bimolecular (B) recombination coefficients (A, B) were deduced to be (9.2x10 7 s -1 , 8.8x10 -10 cm 3 s -1 ), (8.5x10 7 s -1 , 6.6x10 -10 cm 3 s -1 ), and (6.5x10 7 s -1 , 1.4x10 -10 cm 3 s -1 ) for the six period 1.5, 2, and 3 nm well-width LEDs, respectively. From the temperature dependence of the radiative lifetimes, τ rad α T N/2 , the dimensionality N of the active region was found to decrease consistently with decreasing well width. The 3 nm wide wells exhibited ~T 1.5 dependence, suggesting a threedimensional nature, whereas the 1.5 nm wells were confirmed to be two-dimensional (~T 1 ) and the 2 nm wells close to being two-dimensional. We demonstrate that a combination of temperature dependent PL and time-resolved PL techniques can be used to evaluate the dimensionality as well as the quantum efficiencies of the LED active regions for a better understanding of the relationship between active-region design and the efficiency limiting processes in InGaN LEDs.

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“…Liu et al also proposed dual-wavelength InGaN/GaN MQW LEDs, which were grown by the metal-organic chemical vapor deposition (MOCVD) with different periods of high and low indium contents. 15 Gong et al experimentally and numerically demonstrated the electrical, spectral, and optical performances of yellow-green and amber micro-pixelated InGaN LEDs to gain insight into the responsible mechanisms of dualwavelength emission. [16][17][18] Based on these researches, the properties of light-emission and dynamics of carrier transportation in the dual-wavelength InGaN/GaN MQW LEDs were further clarified.…”

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confidence: 98%

“…[21][22][23] In the redesigned structures for dual-wavelength emission, in order to achieve balanced carrier distribution and better confinement based on the experimental results provided by Lu et al and Liu et al, the five pairs of 2-nm blue QWs are divided into two pairs of 2-nm green QWs and three pairs of 6-nm violet QWs. 14,15 Due to the relatively shallow wells, the number and well width of the violet QWs are designed to be more than that of the green QWs to compensate the effect of poor carrier confinement. The schematic diagrams of the four dual-wavelength LED structures under study are depicted in Fig.…”

mentioning

confidence: 99%