2015
DOI: 10.1002/pssc.201510023
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Investigation of the kinetics of the chemical vapor deposition of aluminum from dimethylethylamine alane: experiments and computations

Abstract: Experiments and computations are performed for the metalorganic chemical vapor deposition (MOCVD) of aluminum (Al) from dimethylethylamine alane (DMEAA). The deposition rate as a function of the substrate temperature and the evolution of the deposition rate along the radius of the susceptor are experimentally determined, in a vertical, warm wall MOCVD reactor operating at 10 Torr, in the temperature range 139 °C‐240 °C. Following previously published mechanism for the decomposition of DMEAA, a predictive 3D mo… Show more

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Cited by 9 publications
(29 citation statements)
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“…Depositions are performed in a vertical, cylindrical, stagnant flow, cold wall, stainless steel CVD reactor as described in detail and modeled in previous works. Substrates are 20 × 12 × 2 mm 3 glass and 10 × 10 × 1 mm 3 thermally oxidized Si coupons in order to avoid the formation of silicides (if Si substrates are used).…”
Section: Methodsmentioning
confidence: 99%
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“…Depositions are performed in a vertical, cylindrical, stagnant flow, cold wall, stainless steel CVD reactor as described in detail and modeled in previous works. Substrates are 20 × 12 × 2 mm 3 glass and 10 × 10 × 1 mm 3 thermally oxidized Si coupons in order to avoid the formation of silicides (if Si substrates are used).…”
Section: Methodsmentioning
confidence: 99%
“…In this paper, we describe an innovative route for the processing of Al 13 Fe 4 films by sequential CVD of the two metals followed by in situ thermal annealing to stimulate reactive diffusion. This work is based on our recent investigations of the kinetics and the transport phenomena of the CVD of unary Al and Fe . We characterize the structure and composition of the films, we report preliminary results on the semi‐hydrogenation of acetylene with the obtained Al‐Fe films as catalysts and we propose correlations between the catalytic behavior and the characteristics of the films.…”
Section: Introductionmentioning
confidence: 99%
“…Thus, the method is appropriate to quantify the roughness of Al films for which the root mean square (RMS) roughness is less than 1 mm. We report RMS roughness of samples located at the edge of the susceptor averaged on three different points of each sample surface, since we have observed from the experimental work that the deposition rate of samples at this position best match the theoretical trend of an Arrhenius plot (Aviziotis et al, 2015). Finally, the electrical resistivity of Al thin films is measured in a home-made resistivity apparatus based on the four-point probe method (Samélor et al, 2010).…”
Section: Methodsmentioning
confidence: 99%
“…where the index i represents either the volumetric or the surface reaction, k 0 is the pre-exponential factor, α E is the activation energy, R is the universal gas constant and C DMEAA is the concentration of the precursor. In a previous work (Aviziotis et al, 2015), the values of the pre-exponential factors and activation energies were , for the volumetric and the surface reactions, respectively. The boundary conditions imposed at the macroscopic level are described elsewhere (Cheimarios et al, 2010) and the parameters s and ϵ k / of the Lennard-Jones potential needed for the estimation of the properties of the gas phase mixture in the CVD reactor are calculated with group contribution methods (Poling et al, 2001).…”
Section: Macroscopic Modelingmentioning
confidence: 99%
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