Investigation of the Internal Back Reflectance of Rear-Side Dielectric Stacks for c-Si Solar Cells

Optical Evaluation of the Rear Contacts of Crystalline Silicon Solar Cells by Coupled Electromagnetic and Statistical Ray-Optics Modeling

“…To achieve conduction, the content of the conducting nanoparticles should exceed the percolation threshold, which is estimated to be more than 15 vol% [47,48]. We therefore compare composites of SiO 2 and ITO1 with ITO1 volumetric ratios of 15,20,25, and 30%.…”

“…In so-called 'passivated emitter and rear cell' (PERC) c-Si solar cells, a patterned dielectric stack (e.g., consisting of a selection of SiO 2 , AlO x and SiN x layers), rather than TCO, is often used at the rear [20][21][22][23][24][25][26][27][28][29][30][31][32][33]. In both structures, on textured layers, the dominant optical losses from the rear contact are associated with coupling of the incident light to the metal electrode through evanescent coupling [14][15][16][17][18][19].…”

Effect of the Back Surface Reflector and Passivated Rear Contacts With PERT Solar Cells

“…We used the equations 8 and 9 to determine the saturation current density [6]: (10) Where q is elementary charge, n i is the intrinsic carrier concentration of silicon at 300 K and N A is the doping density.…”

“…The sample structure PERT of a silicon wafer with a locally contacted boron-doped p+ layer, we using the equation 11 for determining both the saturation current density of the contacted area and of the passivated area [6]. (11) Where ∆n is excess carrier concentration, Using S rear and J rear we extract the saturation current density J rear-cont from samples that feature laser-contacted boron-diffused layers with opening fraction f by plotting the inverse effective lifetime τ eff versus the excess carrier concentration ∆n using the equation [6] (12)…”

“…This opening can be performed via chemical etching or laser ablation. [6] When annealing metallization, aluminum diffuses then occasionally, to form the contact on the rear face.…”