Investigation of the impact of the oxide thickness and RESET conditions on disturb in HfO<inf>2</inf>-RRAM integrated in a 65nm CMOS technology

A Built-In Self-Test Structure (BIST) for Resistive RAMs characterization: Application to bipolar OxRRAM

“…As presented in Fig. 5a, after calibration, the model satisfactorily matches quasi-static and dynamic experimental data measured on actual HfO 2 -based memory elements (TiN/Ti/HfO x /TiN stack reported in [11]). To program a bipolar OxRRAM cell, a voltage ramp is needed.…”

Single-ended sense amplifier robustness evaluation for OxRRAM technology

“…As presented in Fig. 4, after calibration, the model satisfactorily matches quasi-static and dynamic experimental data measured on actual HfO 2 -based memory elements (TiN/Ti/HfO x /TiN devices reported in [9]). To program a bipolar OxRRAM cell, a voltage ramp is needed.…”

“…(a) I-V characteristic measured on HfO2-based devices[9] and corresponding simulation using a bipolar physical model. (b) Set voltage as a function of the programming ramp Moreover, the model makes assumptions of a uniform radius of the conduction pathways, a uniform electric field in the cell and temperature triggered acceleration of the oxide reduction reactions ("redox").…”

Impact of Line Resistance Combined with Device Variability on Resistive RAM Memories

“…The larger the size of the CFs, the lower the resistance. Conversely, the rupture of the CFs disconnects the top electrode from the bottom electrode, resulting in a high resistance state (HRS) of the cell [16].…”