Investigation of the impact of band offset perturbations on the performance of abrupt HBT with heavily doped base

Zhou, Shouli; Hui, Huang; Yong-qing, Huang; Ren, Xiaomin

doi:10.7498/aps.56.2890

Cited by 8 publications

(3 citation statements)

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“…∂T ∂y y=0,W = 0, (6) where the bottom of the chip (z = d) is fixed at the ambient temperature T 0 (300 K in our study), the heat source is assumed to be located on the top surface (z = 0) and p(x, y) is a distribution function of input power density on top surfaces of the chip, which is zero except at the fingers where the device power is dissipated and K th is the thermal conductivity of substrate materials.…”

Section: Thermal Modelmentioning

confidence: 99%

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Thermal resistance matrix representation of thermal effects and thermal design in multi-finger power heterojunction bipolar transistors

金冬月¹,

张万荣²,

陈亮³

et al. 2011

Chinese Phys. B

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The thermal resistance matrix including self-heating thermal resistance and thermal coupling resistance is presented to describe the thermal effects of multi-finger power heterojunction bipolar transistors. The dependence of thermal resistance matrix on finger spacing is also investigated. It is shown that both self-heating thermal resistance and thermal coupling resistance are lowered by increasing the finger spacing, in which the downward dissipated heat path is widened and the heat flow from adjacent fingers is effectively suppressed. The decrease of self-heating thermal resistance and thermal coupling resistance is helpful for improving the thermal stability of power devices. Furthermore, with the aid of the thermal resistance matrix, a 10-finger power heterojunction bipolar transistor (HBT) with non-uniform finger spacing is designed for high thermal stability. The optimized structure can effectively lower the peak temperature while maintaining a uniformity of the temperature profile at various biases and thus the device effectively may operate at a higher power level.

show abstract

Section: Thermal Modelmentioning

confidence: 99%

“…With the aid of the separation of variables, the analytical solution of the heat flow equation ( 2) can be derived under the appropriate boundary conditions given by Eqs. (3)- (6). The expression of the temperature in the i-th emitter finger T i (x i , y i , 0) is given as [11,12] T…”

Section: Thermal Modelmentioning

confidence: 99%

Thermal resistance matrix representation of thermal effects and thermal design in multi-finger power heterojunction bipolar transistors

金冬月¹,

张万荣²,

陈亮³

et al. 2011

Chinese Phys. B

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“…III-V compound semiconductor devices, such as GaAs-and InP-base high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), [1,2] are considered promising candidates for high-speed circuits. Especially, HEMTs are attractive devices for microwave/millimetre-wave lownoise, high-gain applications.…”

Section: Introductionmentioning

confidence: 99%

Device research on GaAs-based InA1As/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition

Zhang

Xiaojun

et al. 2010

Chinese Phys. B

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This paper applies a novel quad-layer resist and e-beam lithography technique to fabricate a GaAs-based InA1As/InGaAs metamorphic high electron mobility transistor (HEMT) grown by metal organic chemical vapour deposition (MOCVD). The gate length of the metamorphic HEMT was 150 nm, the maximum current density was 330 mA/mm, the maximum transconductance was 470 mS/mm, the threshold voltage was −0.6 V, and the maximum current gain cut-off frequency and maximum oscillation frequency were 102 GHz and 450 GHz, respectively. This is the first report on tri-termination devices whose frequency value is above 400 GHz in China. The excellent frequency performances promise the possibility of metamorphic HEMTs grown by MOCVD for millimetre-wave applications, and more outstanding device performances would be obtained after optimizing the material structure, the elaborate T-gate and other device processes further.

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Epitaxy structure of a 1.5 μm n-p-n InGaAsP-InP transistor laser

段子刚¹,

黄晓东²,

周宁³

et al. 2010

Acta Phys. Sin.

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An InGaAsP-InP transistor laser (TL) working at 1.5 μm and its epitaxy structure with MQW active layer buried between unsymmetrical upper and lower waveguides in base region has been designed and modeled. The simulation result shows that the proposed TL has good optical and lateral electrical current confinement. The result of epitaxial experiment by metalorganic chemical vapor deposition (MOCVD) shows that the diffusion of doped Zn2+ from heavily doped base contactor layer to active waveguide can induce serious degradation of quantum wells. By modeling the Zn2+ diffusion from heavily doped base contactor layer, a gradient doping profile with an average doping density of 1 ( 1018 cm-3 in the base contact layer has been used in the epitaxy process to constrain the Zn2+ diffusion to quantum wells. The test result of the epitaxy material has demonstrated high PL intensity at 1.51 μm and clear satellite diffraction peaks in the XRD spectrum.

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Investigation of the impact of band offset perturbations on the performance of abrupt HBT with heavily doped base

Cited by 8 publications

References 0 publications

Thermal resistance matrix representation of thermal effects and thermal design in multi-finger power heterojunction bipolar transistors

Thermal resistance matrix representation of thermal effects and thermal design in multi-finger power heterojunction bipolar transistors

Device research on GaAs-based InA1As/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition

Epitaxy structure of a 1.5 μm n-p-n InGaAsP-InP transistor laser

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