Thermal resistance matrix representation of thermal effects and thermal design in multi-finger power heterojunction bipolar transistors

金冬月,; 张万荣,; 陈亮,; 付强,; 肖盈,; 王任卿,; 赵昕,

doi:10.1088/1674-1056/20/6/064401

Cited by 3 publications

(2 citation statements)

References 13 publications

(5 reference statements)

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“…Note that the temperatures of the central fingers are still higher than the others even when the novel structure of stepped Ge doping profile is adopted. As studied in our previous work [5] , the uniformity of the temperature profile on the chip surface can be improved effectively by optimizing the length of emitter fingers. Therefore, the non-uniform emitter finger length layout is proposed on thermal aspect to decrease the thermal coupling for minimizing temperature differences.…”

Section: Design and Analysismentioning

confidence: 98%

Simultaneous Optimization of Ge Doping Profile and Layout in Multi-Finger Power SiGe HBTs for High Thermal Stability

Rui

Jin

Zhang

et al. 2013

AMR

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Considering the effect of electro-thermal feedback on the thermal stability of multi-finger power SiGe HBT, optimization of SiGe HBT on both Ge doping profile (electrical aspect) and layout (thermal aspect) is demonstrated in this paper. A novel stepped Ge doping profile of SiGe HBT with a grading Ge concentration in base region is proposed to improve the temperature coefficient of current gain, meanwhile, the cut-off frequency of HBT is also increased considerably due to the accelerated electric field caused by the Ge concentration grading. However, there is still an uneven temperature distribution. Therefore, the layout of multi-finger HBT with nun-uniform emitter finger length is optimized to compensate the thermal coupling effects and hence the uneven temperature distribution is improved obviously. It is shown that the device with simultaneous optimization of Ge doping profile and layout could be in thermal stability over a wide temperature range, which presents useful guideline to design microwave power HBTs.

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Section: Design and Analysismentioning

confidence: 98%

Simultaneous Optimization of Ge Doping Profile and Layout in Multi-Finger Power SiGe HBTs for High Thermal Stability

Rui

Jin

Zhang

et al. 2013

AMR

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“…It is known that the thermal resistance matrix ([R i j ]) could be used to represent the thermal effects of a one-dimensional HBT array, [18,19] which is helpful to design the layout of the device. However, the prior [R i j ] representation is not applicable for the 2-D HBTs array.…”

Section: Introductionmentioning

confidence: 99%

Thermal resistance matrix representation of thermal effects and thermal design of microwave power HBTs with two-dimensional array layout*

Chen¹,

Jin²,

Zhang³

et al. 2019

Chinese Phys. B

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Based on the thermal network of the two-dimensional heterojunction bipolar transistors (HBTs) array, the thermal resistance matrix is presented, including the self-heating thermal resistance and thermal coupling resistance to describe the self-heating and thermal coupling effects, respectively. For HBT cells along the emitter length direction, the thermal coupling resistance is far smaller than the self-heating thermal resistance, and the peak junction temperature is mainly determined by the self-heating thermal resistance. However, the thermal coupling resistance is in the same order with the self-heating thermal resistance for HBT cells along the emitter width direction. Furthermore, the dependence of the thermal resistance matrix on cell spacing along the emitter length direction and cell spacing along the emitter width direction is also investigated, respectively. It is shown that the moderate increase of cell spacings along the emitter length direction and the emitter width direction could effectively lower the self-heating thermal resistance and thermal coupling resistance, and hence the peak junction temperature is decreased, which sheds light on adopting a two-dimensional non-uniform cell spacing layout to improve the uneven temperature distribution. By taking a 2 × 6 HBTs array for example, a two-dimensional non-uniform cell spacing layout is designed, which can effectively lower the peak junction temperature and reduce the non-uniformity of the dissipated power. For the HBTs array with optimized layout, the high power-handling capability and thermal dissipation capability are kept when the bias voltage increases.

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Novel microwave power sige heterojunction bipolar transistor with high thermal stability over a wide temperature range

Dong¹,

Dongyue²,

Zhang³

et al. 2013

Acta Phys. Sin.

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Thermal instability of power SiGe heterojunction bipolar transistor (HBT) at high current over a wide temperature range restricts the applications of the device in RF and microwave circuits. In order to improve the thermal instability, the influences of Ge profile in a base region on the electrical and thermal characteristics of microwave power SiGe HBT are studied with the aid of the model of multi-finger power SiGe HBT established by SILVACO TCAD. It is shown that for the HBT with graded step Ge profile, a higher cut-off frequency fT can be achieved due to the accelerating electric field caused by the graded step Ge concentration in the base region when compared with the device with uniform Ge profile. The influences of temperature on current gain β and fT are weakened, which avoids the drift of electrical characteristics over a wide temperature range. Although the temperature of device is lowered, the temperature of each emitter finger is still non-uniform. Considering the difference in heat dissipation among emitter fingers, a new device with non-uniform emitter finger spacing in layout and a graded step Ge profile in base region is designed. For the new device, the uniformity of temperature among emitter fingers is achieved, higher fT is kept, β and fT are less sensitive to temperature variation. Hence the thermal instability is obviously improved compared with the device with uniform emitter finger spacing and uniform Ge profile in base region, indicating the superiority of the new device at high current over a wide temperature range.

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Thermal resistance matrix representation of thermal effects and thermal design in multi-finger power heterojunction bipolar transistors

Cited by 3 publications

References 13 publications

Simultaneous Optimization of Ge Doping Profile and Layout in Multi-Finger Power SiGe HBTs for High Thermal Stability

Simultaneous Optimization of Ge Doping Profile and Layout in Multi-Finger Power SiGe HBTs for High Thermal Stability

Thermal resistance matrix representation of thermal effects and thermal design of microwave power HBTs with two-dimensional array layout*

Novel microwave power sige heterojunction bipolar transistor with high thermal stability over a wide temperature range

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