Investigation of the degradations in power GaN-on-Si MIS-HEMTs subjected to cumulative γ-ray irradiation

Sharma, Chandan; Modolo, Nicola; Chen, Hsi-Han; Tseng, Y.-Y.; Tang, Shun-Wei; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Singh, Rajendra; Wu, Tian-Li

doi:10.1016/j.microrel.2019.06.041

Cited by 5 publications

(8 citation statements)

References 24 publications

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“…The introduced defects modified the native defect structure and achieved a uniform distribution. 18 In our previous studies x-ray photoelectron spectroscopy, 22 x-ray diffraction (XRD), and CL imaging 23 results have shown that c-irradiation has partial annealing effects. These effects cause the reduction of dangling bonds at the surface as a result of oxidation and structural-chemical ordering at the interface.…”

Section: Methodsmentioning

confidence: 98%

Effects of γ-Ray Irradiation on AlGaN/GaN Heterostructures and High Electron Mobility Transistor Devices

Sharma

Singh

Chao

et al. 2020

Journal of Elec Materi

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This study examined the effects of three cumulative c-ray irradiation doses on AlGaN/GaN epilayer material and on high electron mobility transistor (HEMT) devices. After a cumulative c-ray dose of 16 kGy, the Hall mobility increased from 1800 cm 2 /V s to 2100 cm 2 /V s, as determined through Hall measurement. Atomic force microscopy indicated an improvement in surface roughness but no change in the surface potential ; s ð Þ. The HEMT device exhibited improvement in the drain current, with a subtle decreasing tendency in the leakage current. At high doses of c-ray irradiation, the trends in the material and device parameters saturated. Moreover, the metal-semiconductor interface degraded, as confirmed through scanning electron microscopy image analysis.

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Section: Methodsmentioning

confidence: 98%

Effects of γ-Ray Irradiation on AlGaN/GaN Heterostructures and High Electron Mobility Transistor Devices

Sharma

Singh

Chao

et al. 2020

Journal of Elec Materi

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“…This improvement, in turn, can be an effect from the relaxation of piezoelectric coefficients and structural reordering [32] [47] or through the improvement in the surface roughness [31]. Annealing of active traps post irradiation [48] and subsequent generation of interstitial/point defects in the form of nitrogen vacancies acting as donors [30] can also improve the carrier densities. Apart from these, reduction in the channel resistance [30][31][32] or decrease in activation energy coupled with an increase in the minority carrier diffusion lengths [49][50] has also been observed to improve the drain current of the device.…”

Section: B Impact On DC Characteristicsmentioning

confidence: 99%

“…In this regard, several attempts have been made to assess the reliability of GaN HEMTs in the presence of ionizing radiations for specific applications in nuclear reactors and space. Several studies have also reported the sensitivity of GaN HEMT devices towards the ionizing X -Rays [26][27][28] and γ -Rays [28][29][30][31][32]. The impact of γ -Rays irradiation on reported HEMT architectures is compiled in Table I [28][29][30][31][32].…”

Section: Introductionmentioning

confidence: 99%

“…Several studies have also reported the sensitivity of GaN HEMT devices towards the ionizing X -Rays [26][27][28] and γ -Rays [28][29][30][31][32]. The impact of γ -Rays irradiation on reported HEMT architectures is compiled in Table I [28][29][30][31][32].…”

Section: Introductionmentioning

confidence: 99%

“…The MOSHEMT architectures, on the other hand, demonstrate a significant shift in the V TH which is enhanced primarily due to the charging of the insulator at MOS/MIS Gate contact. The OFF -state current (I OFF ) for both X -Ray [26][27][28] and γ -Ray [28][29][30][31][32] irradiation as reported show significant degradation, which causes a major concern regarding the reliability issues of such devices for prolonged use.…”

Section: Introductionmentioning

confidence: 99%

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Interplay Between γ–Ray Irradiation and 3DEG for Dosimeter Applications

et al. 2022

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This work investigates the cumulative dose 60 Co gamma (γ) -ray irradiation effects on enhancement mode HEMT devices inheriting 3D -Electron and Hole Gases for dosimeter applications. The devices are irradiated through a 60 Co source and demonstrate the enhancement in the drain current metrics. To elucidate, the said devices were irradiated through different mechanisms and the Compton effect was investigated through contour plots via TCAD simulations. The degradation of Schottky Gate contact and insulator charging affects the 2D -Hole Gas at the GaN cap and thereby affects the bottleneck at the 3DEG sheet. This significantly affects the OFF -state leakage components of the said device and can therefore be exploited for potential use in sensing and dosimeter applications. The leakage components can be exploited further to improve the linearity of the dosimeter by considering different grading profiles of the AlGaN layer. In this regard, a workflow for optimizing the sensitivity and linearity of the dosimeter through different graded profiles is also presented. Amongst all, gaussian graded profiles have been identified as the best -case scenario considering the sensitivity and exhibiting a linear operation.

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Investigation of trapping effects in Schottky lightly doped P-GaN gate stack under γ-ray irradiation

Wang

Jiang

et al. 2022

Applied Physics Letters

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In this Letter, trapping effects of a Schottky lightly Mg-doped p-GaN gate stack for low-power applications have been investigated, and further analysis focusing on AlGaN/GaN interface traps under γ-ray irradiation has been carried out. A negligible shift in the flatband voltage with γ-ray irradiation dose up to 800 krad indicates the superior radiation tolerance of the p-GaN gate structure. The difference between capacitance dispersion at the measurement frequency below and above 500 kHz is observed, which is attributed to trapping effects in different locations with varying gate voltage. Moreover, the frequency-dependent conductance method is put forward to assess the effects of different doses of γ-ray irradiation on the AlGaN/GaN interface traps. Based on that method, aside from the shallow trap states [the trap activation energy ( ET) is about 0.334–0.338 eV] previously found in the traditional normally on high electron mobility transistor (HEMT), another type of deeper trap states at the AlGaN/GaN interface ( ET is about 0.467–0.485 eV) is detected. It is observed that the ET of shallow trap states distributes at a deeper and broader range as the irradiation dose increases. Additionally, the trap density decreased after 600 krad doses irradiation but increased after 800 krad doses irradiation for both deep and shallow ET. Transmission electron microscopy and atomic force microscopy are used to demonstrate the smooth AlGaN/GaN interface morphology, which will not be greatly damaged after 800 krad doses of γ-ray irradiation. This work can provide a further understanding of radiation tolerance and trapping effects of p-GaN gate HEMTs for low-voltage applications.

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Investigation of the degradations in power GaN-on-Si MIS-HEMTs subjected to cumulative γ-ray irradiation

Cited by 5 publications

References 24 publications

Effects of γ-Ray Irradiation on AlGaN/GaN Heterostructures and High Electron Mobility Transistor Devices

Effects of γ-Ray Irradiation on AlGaN/GaN Heterostructures and High Electron Mobility Transistor Devices

Interplay Between γ–Ray Irradiation and 3DEG for Dosimeter Applications

Investigation of trapping effects in Schottky lightly doped P-GaN gate stack under γ-ray irradiation

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