Effects of γ-Ray Irradiation on AlGaN/GaN Heterostructures and High Electron Mobility Transistor Devices

Abstract

This study examined the effects of three cumulative c-ray irradiation doses on AlGaN/GaN epilayer material and on high electron mobility transistor (HEMT) devices. After a cumulative c-ray dose of 16 kGy, the Hall mobility increased from 1800 cm 2 /V s to 2100 cm 2 /V s, as determined through Hall measurement. Atomic force microscopy indicated an improvement in surface roughness but no change in the surface potential ; s ð Þ. The HEMT device exhibited improvement in the drain current, with a subtle decreasing tendency in the leakage current. At high doses of c-ray irradiation, the trends in the material and device parameters saturated. Moreover, the metal-semiconductor interface degraded, as confirmed through scanning electron microscopy image analysis.

Effects of high-dose gamma-ray irradiation on an In0.53Ga0.47As high electron mobility transistor

“…It is well known that γ-rays affect trapping sites at the semiconductor interface and modify the concentration of the traps. 14,22) Nevertheless, as shown in Table I, the I ON /I OFF ratio and the subthreshold swing were improved after γ-ray irradiation. This is due to the decrease of total carriers as both I ON and I OFF are decreased.…”

Electron beam irradiation effects on GaN/InGaN multiple quantum well structures

“…Therefore, it is important to study the influence of high-energy irradiation on GaN-based devices [5][6][7][8][9]. The results show that GaN-based devices have high sensitivity to relatively low-dose gamma ray, electron, proton, and neutron irradiation [10][11][12][13][14][15]. The performance of GaN-based * Author to whom any correspondence should be addressed.…”

Computational-fitting method for mobility extraction in GaN HEMT

“…[20][21][22] The TLM method is the most widely used method, which requires specic test areas with varying pitches on the wafer, and the parameters are derived from linear tting results. [23][24][25][26] However, it is susceptible to process non-uniformity and has specic design and ow requirements. Thus, these classical methods have higher process requirements and more complex calculations, resulting in lower accuracy in extracting mobility, compared to the direct extraction of contact resistance and mobility from the completed device.…”