Investigation of the atomic, crystal, and domain structures of materials based on X-ray diffraction and absorption data: A review

Boiko, M. V.; Sharkov, M. D.; Бойко, А. М.; Konnikov, S. G.; Bobyl, A. V.; Budkina, N. S.

doi:10.1134/s1063784215110067

Cited by 16 publications

(5 citation statements)

References 27 publications

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“…The phase composition of the samples was identified by the position of the reflection peaks. XRD θ-2θ curves were processed using the Scherrer method [20] to determine the characteristic size of the block in the direction perpendicular to the plane of epitaxial growth.…”

Section: Methodsmentioning

confidence: 99%

High Sensitivity Low-Temperature Hydrogen Sensors Based on SnO2/κ(ε)-Ga2O3:Sn Heterostructure

et al. 2023

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The structural and gas-sensitive properties of n-N SnO2/κ(ε)-Ga2O3:Sn heterostructures were investigated in detail for the first time. The κ(ε)-Ga2O3:Sn and SnO2 films were grown by the halide vapor phase epitaxy and the high-frequency magnetron sputtering, respectively. The gas sensor response and speed of operation of the structures under H2 exposure exceeded the corresponding values of single κ(ε)-Ga2O3:Sn and SnO2 films within the temperature range of 25–175 °C. Meanwhile, the investigated heterostructures demonstrated a low response to CO, NH3, and CH4 gases and a high response to NO2, even at low concentrations of 100 ppm. The current responses of the SnO2/κ(ε)-Ga2O3:Sn structure to 104 ppm of H2 and 100 ppm of NO2 were 30–47 arb. un. and 3.7 arb. un., correspondingly, at a temperature of 125 °C. The increase in the sensitivity of heterostructures at low temperatures is explained by a rise of the electron concentration and a change of a microrelief of the SnO2 film surface when depositing on κ(ε)-Ga2O3:Sn. The SnO2/κ(ε)-Ga2O3:Sn heterostructures, having high gas sensitivity over a wide operating temperature range, can find application in various fields.

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Section: Methodsmentioning

confidence: 99%

High Sensitivity Low-Temperature Hydrogen Sensors Based on SnO2/κ(ε)-Ga2O3:Sn Heterostructure

et al. 2023

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“…The Williamson−Hall model [8] for processing a set of reflections was applied to the obtained θ−2θ XRD curves. The FWHM values of reflection curves (denoted as ) are known to be defined by two dominating factors (crystallite sizes and micro-stresses) described by Gauss functions, which fit the registered curve on being convoluted.…”

Section: mentioning

confidence: 99%

High-temperature annealing of ( ) β-Ga₂O₃ substrates for reducing structural defects after diamond sawing

Butenko,

Boiko,

Sharkov

et al. 2023

J. Semicond.

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A commercial epi-ready ( ) β-Ga2O3 wafer was investigated upon diamond sawing into pieces measuring 2.5 × 3 mm2. The defect structure and crystallinity in the cut samples has been studied by X-ray diffraction and a selective wet etching technique. The density of defects was estimated from the average value of etch pits calculated, including near-edge regions, and was obtained close to 109 cm−2. Blocks with lattice orientation deviated by angles of 1−3 arcmin, as well as non-stoichiometric fractions with a relative strain about (1.0−1.5) × 10−4 in the [ ] direction, were found. Crystal perfection was shown to decrease significantly towards the cutting lines of the samples. To reduce the number of structural defects and increase the crystal perfection of the samples via increasing defect motion mobility, the thermal annealing was employed. Polygonization and formation of a mosaic structure coupled with dislocation wall appearance upon 3 h of annealing at 1100 °C was observed. The fractions characterized by non-stoichiometry phases and the block deviation disappeared. The annealing for 11 h improved the homogeneity and perfection in the crystals. The average density of the etch pits dropped down significantly to 8 × 106 cm−2.

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“…The XRD data were recorded in the reflection mode. With such an experimental setup, the line positions of the diffraction reflection curves (DRC) provide information on the interplanar (and, possibly, interlayer) distance of the quasi-two-dimensional crystals [28]. In order to evaluate the synthesis reproducibility, the studies were performed on several samples obtained during the experiments at the various temperatures.…”

Section: X-ray Diffraction Analysis (Xrd)mentioning

confidence: 99%

Crystals of the phenazine coordination polymer with the third order symmetry axis: formation, properties

et al. 2022

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Unusual quasi-two-dimensional crystals of a regular triangular shape, self-formed in the process of obtaining a coordination polymer based on phenazine and silver, are described and studied. X-ray diffraction studies were carried out, the interplanar distance was determined, and the spectra of Raman scattering were obtained. A mechanism is proposed that can cause the appearance of triangular crystals from nuclei of hexagonal symmetry. Keywords: X-ray diffractometry, Raman scattering, phenazines - organic crystals.

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Investigation of the atomic, crystal, and domain structures of materials based on X-ray diffraction and absorption data: A review

Cited by 16 publications

References 27 publications

High Sensitivity Low-Temperature Hydrogen Sensors Based on SnO2/κ(ε)-Ga2O3:Sn Heterostructure

High Sensitivity Low-Temperature Hydrogen Sensors Based on SnO2/κ(ε)-Ga2O3:Sn Heterostructure

High-temperature annealing of ( ) β-Ga₂O₃ substrates for reducing structural defects after diamond sawing

Crystals of the phenazine coordination polymer with the third order symmetry axis: formation, properties

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Investigation of the atomic, crystal, and domain structures of materials based on X-ray diffraction and absorption data: A review

Cited by 16 publications

References 27 publications

High Sensitivity Low-Temperature Hydrogen Sensors Based on SnO2/κ(ε)-Ga2O3:Sn Heterostructure

High Sensitivity Low-Temperature Hydrogen Sensors Based on SnO2/κ(ε)-Ga2O3:Sn Heterostructure

High-temperature annealing of ( ) β-Ga2O3 substrates for reducing structural defects after diamond sawing

Crystals of the phenazine coordination polymer with the third order symmetry axis: formation, properties

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Product

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High-temperature annealing of ( ) β-Ga₂O₃ substrates for reducing structural defects after diamond sawing