Investigation of the absorption of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mi mathvariant="normal">Cr</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn><mml:mo>+</mml:mo></mml:mrow></mml:msup></mml:mrow><mml:mo>(</mml:mo><mml:mn>3</mml:mn><mml:mn /><mml:mrow><mml:msup><mml:mrow><mml:mi>d</mml:mi></mml:mrow><mml:mrow><mml:mn>4</mml:mn></mml:mrow></mml:msup></mml:mrow><mml:mo>)</mml:mo></mml:math>in GaAs

Hennel, A. M.; Szuszkiewicz, W.; Bałkanski, M.; Martinez, G.; Clerjaud, B.

doi:10.1103/physrevb.23.3933

Cited by 57 publications

(10 citation statements)

References 23 publications

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“…Through Hall and chemical analysis data, Brozel et al [32] postulated that chromium can act as a double acceptor state confirming thus the possibility of three charge state as first argued by ESR results [12]. Nevertheless in spite of some electrooptical results on space charge barriers which relate, two acceptor states to chromium in the gap [21,22], it has been clearly demonstrated by Clerjaud et al [10] using ESR and hydrostatic pressure measurements that the double acceptor Cr + energy level is above the GaAs conduction band and this conclusion has been reinforced by the recent reinterpretation of the first assigned Cr+ 1 signal as due to Cr4+ [17,33].…”

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confidence: 91%

“…This type of material, specifically for GaAs : Cr has a great technological importance as substrates for device fabrication [1]. Consequently, the physical nature and the properties of the Cr centre which control the electrical properties of the material has been the subject of several studies and numerous techniques have been applied : optical spectroscopic measurements like luminescence [2][3][4][5][6], absorption [7][8][9][10][11], ESR studies [12][13][14][15][16][17], electro-optical measurements such as Deep Level Transient Spectroscopy (DLTS) and photocapacity [18][19][20][21][22][23][24], Optical Transient Current Spectroscopy (OTCS) [25][26][27], photoconductivity and photo-Hall methods [28][29][30][31].…”

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confidence: 99%

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Detailed optical characterization of the deep cr level in gaas

et al. 1982

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The deep level optical spectroscopy by the so called DLOS technique gives the spectral shape of both σon(hv) and σ op(hv), the optical cross sections for the transitions between a deep level and the conduction and valence bands, in a very sensitive and selective way. We have applied this technique to the optical study of the HL1 trap related to chromium in GaAs, in very pure LPE layers of n and p type doped with chromium. We can therefore determine what kind of charge states of chromium we are dealing with by çomparing σo n and σop with the optical absorption spectra in bulk materials. Moreover, comparisons between the excitation spectra of luminescence and the photoionization cross section σo n and σop have given unambiguous interpretation of the origin of the two luminescence bands at 0.57 and 0.62 eV found by YAG laser excitation in bulk Cr doped GaAs depending on the Fermi level position. They are interpreted as the radiative transitions between the (Cr3+-Cr2+ ) centre and the bands. In this way, we give a coherent description of the thermal and optical properties of the single deep acceptor level corresponding to the Cr 3+ or Cr2+ states according to its electronic filling

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Detailed optical characterization of the deep cr level in gaas

et al. 1982

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“…We publish here the results of the photoluminescence experiments and a tentative interpretation of some of the data. Results of other experiments will be published also in this issue [12].…”

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YAG photoluminescence of GaAs : Cr

Deveaud¹,

Hennel

Szuszkiewicz

et al. 1980

Rev. Phys. Appl. (Paris)

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“…Expérimental procédure. -Two types of GaAs : Cr samples were measured, RT 123 Cr doped in liquid phase and p-type sample (Cr 8) doped with chromium by diffusion [4,5]. The samples were optically polished.…”

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Photoionization transition Cr3+ → Cr2+ in GaAs : Cr

Hennel

Szuszkiewicz

Martinez

et al. 1980

Rev. Phys. Appl. (Paris)

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2014 Le spectre d'absorption de photoionisation d'échantillons de GaAs fortement dopés au chrome a été mesuré dans la région d'énergie comprise entre 5 500 et 11000 cm-1 jusqu'à une pression de 9 kbar à 300 K et 77 K. Les mesures de RPE sous excitation optique (1,09 03BCm) montrent que cette absorption est due à un transfert de charge de Cr3+ vers Cr2 +. Un modèle théorique tenant compte de la relaxation de réseau est utilisé pour reproduire les courbes de photoionisation. Les valeurs d'ionisation optique EO et thermique ET ainsi que leur dépendance en fonction de la pression sont obtenues. On trouve une énergie de relaxation ER = EO-ET de l'ordre de 0,17 eV et une section efficace de capture pour l'absorption d'environ 5 x 10-17 cm2. Abstract. 2014 The photoionization absorption spectrum of the strongly Cr-doped GaAs samples was measured in the energy region 5 500-11 000 cm-1 under hydrostatic pressure up to 9 kbar at 300 K and 77 K. The EPR measurements with 1.09 03BCm laser excitation shows that this absorption is due to the charge transfer Cr3+ ~ Cr2+ transitions. The theoretical model which takes into account the lattice relaxation effect is used to fit the photoionization absorption curves. The values of optical ionisation energy EO, thermal ionization energy ET and their pressure dependence are obtained. The relaxation energy ER = EO-ET is found as about 0.17 eV and the absorption cross section as about 5 x 10-17 cm2.

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Investigation of the absorption ofCr2+(3d4)in GaAs

Cited by 57 publications

References 23 publications

Detailed optical characterization of the deep cr level in gaas

Detailed optical characterization of the deep cr level in gaas

YAG photoluminescence of GaAs : Cr

Photoionization transition Cr3+ → Cr2+ in GaAs : Cr

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