YAG photoluminescence of GaAs : Cr

Deveaud, B.; Hennel, A. M.; Szuszkiewicz, W.; Picoli, G.; Martinez, G.

doi:10.1051/rphysap:01980001503067100

Cited by 14 publications

(15 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Almost all the associated transitions have been found : Cr3 + + electron in the valence band X Cr2+ : 0.92 eV by absorption [14], . 0.57 eV in luminescence [47] and 0.7 eV for thermal activation energy at 350 K (D.L.T.S. [25]).…”

Section: Measurementsmentioning

confidence: 99%

“…[25]). Cr 21 -Cr 31 + electron in the conduction band : 0.61 eV in luminescence [47] and 0.7 eV for thermal activation energy at 350 K [25]. The absorption transition has not been detected.…”

Section: Measurementsmentioning

confidence: 99%

“…Hence, following E.S.R., the second acceptor level of chromium isolated on gallium site is not in the gap. As a consequence, the double acceptor Cr+ should only be excited with light on energy larger than 1.5 eV and thus the isotropic signal at g = 1.993 observed by Kaufmann [47] :…”

mentioning

confidence: 96%

“…Some authors have shown that this interpretation could not stand [47,48,49]. The main reasons are : -The ground state splitting of the 0.839 eV line, as resolved by Lightowlers et al [5,6] does not fit with the splitting that is deduced from the E.S.R.…”

mentioning

confidence: 99%

“…The 0.64 eV (and 0.68 eV) bands are related to the incorporation of Ga203 in the melt [47,53,54,55]. The 1 eV band has still no reliable interpretation and finally the origin of the 0.574 eV band is not obvious.…”

mentioning

confidence: 99%

See 4 more Smart Citations

Interpretation of luminescence in GaAs : Cr : 0.839 eV and 0.574 eV lines

Picoli¹,

Deveaud²,

Galland

1981

J. Phys. France

Self Cite

View full text Add to dashboard Cite

2014 La raie de luminescence à 0,839 eV dans GaAs dopé chrome est généralement interprétée comme étant une transition interne à Cr2+ (5E-5T2) en site substitutionnel. Cette interprétation n'est pas en accord avec les résultats de R.P.E. et d'absorption en infra-rouge lointain. White a proposé une interprétation en termes de recombinaison excitonique sur un centre iso-électronique. Nous proposons ici une autre explication où la raie à 0,839 eV résulte de la transition interne d'un ion 5D (d4 ou d6) en symétrie C3V. La raie à 0,839 eV correspond à la transition 5E-5E*. L'état excité 5E* est correctement décrit par une théorie de champ cristallin statique tandis que l'état fondamental 5E nécessite une description vibronique E ~ 03B5 en symétrie trigonale. Pour cet état, nous obtenons un rapport EJT/012703C9 = 2,2. Les niveaux de structure fine à 1,50 meV et 2,56 meV sont interprétés comme les deux premiers niveaux vibroniques excités (A1, A2) dont la dégénérescence (accidentelle pour un couplage linéaire) a été levée par un léger effet non linéaire. La structure fine de l'état fondamental E est décrite à l'aide d'un opérateur Lz ayant subi un facteur de réduction p = 0,03. Des considérations à un électron permettent d'interpréter la raie à 0,839 eV comme étant due à un ion Cr2+ (d4) en site gallium couplé à un donneur de la colonne VI en site substitutionnel, ou à un ion Cr0 (d6) en site interstitiel couplé à un accepteur en site arsenic. La raie de luminescence à 0,574 eV est interprétée comme étant due à la capture d'un trou sur le même centre.Abstract. 2014 The 0.839 eV luminescence line in GaAs : Cr is generally interpreted as an internal transition in Cr2+ ion (5E-5T2) on gallium site. This interpretation does not agree with E.P.R. and far-infrared absorption results.White has proposed an interpretation as an excitonic recombination on an isoelectronic deep centre. We propose an alternative explanation in which the 0.839 eV line would be an internal transition in a 5D ion (d4 or d6) in C3V symmetry. The 0.839 eV line would correspond to a 5E*-5E transition and the 0.75 eV hump to the 5E*-5A1 transition. The excited state 5E* is satisfactory described by a crystal field treatment whereas the 5E ground state needs a vibronic description E ~ 03B5 in trigonal symmetry. For that state we get a ratio EJT/012703C9 = 2.2. The fine structure levels I and J respectively at 1.50 and 2.56 meV are interpreted as the first two excited vibronic states (A1 and A2) by including a weak non linear coupling. The fine structure of the ground state 5E is described using an operator Lz submitted to a reduction factor p = 0.03. One électron considerations lead to the interpretation of the 0.839 eV line as a transition related either to a Cr2+ ion (d4) on gallium site coupled to a donor (sixth column) on arsenic site or to a Cr0 ion (d6) interstitial coupled to an acceptor on arsenic site. Moreover, the luminescence line at 0.574 eV is interpreted as the transition corresponding to the capture of a hole on the same centre.J. Physique ...

show abstract

Section: Measurementsmentioning

confidence: 99%

Section: Measurementsmentioning

confidence: 99%

mentioning

confidence: 96%

mentioning

confidence: 99%

mentioning

confidence: 99%

See 3 more Smart Citations

Interpretation of luminescence in GaAs : Cr : 0.839 eV and 0.574 eV lines

Picoli¹,

Deveaud²,

Galland

1981

J. Phys. France

Self Cite

View full text Add to dashboard Cite

show abstract

The study of impurity levels in LEC semi-insulating GaAs:Cr samples by two-source photoconductivity measurements

Pastrňák

Karel

Oswald

et al. 1987

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

Spectral photoconductivity curves of SI GaAs:Cr crystals are measured in the extrinsic region using the two light sources method; high intensity monochromatic illumination ensures steady‐state population of levels; and probe light of low intensity serves to measure corresponding photoconductivity curves. The set of obtained curves is decomposed into elementary contributions using the minimization program MINUIT. The obtained photoionization cross‐sections are compared with those from absorption measurements and interpreted as transitions involving Cr2+, Cr3+, and Cr4+ ions. The influence of interaction among impurities and of internal electric field on the photoionization cross‐section is discussed.

show abstract