Investigation of Temperature and Source/Drain Overlap Impact on Negative Capacitance Silicon Nanotube FET (NC Si NTFET) with Sub-60mV/decade Switching

Improved DC Performance of Nanotube Junctionless Field-Effect Transistors with Dielectric Pocket Integration

“…Another architecture called Nanotube, 6,[14][15][16][17] which has a similar structure as that of a nanowire but has an additional gate called "Core gate" at the center of the device, 16 exhibited better performance than NWMOSFETs by offering a better gate control over the channel. Therefore, to overcome the need for ultra-steep doping levels and complex temperature budgets, the structure of Nanotube JLFETs (NT-JLFETs) was proposed.…”