Investigation of Ta<sub>2</sub>O<sub>5</sub> as an Alternative High-&lt;inline-formula&gt; 
                     &lt;tex-math notation="LaTeX"&gt;${k}$ &lt;/tex-math&gt;
                  &lt;/inline-formula&gt; Dielectric for InAlN/GaN MOS-HEMT on Si

Kumar, Sandeep; Kumar, Himanshu; Vura, Sandeep; Pratiyush, Anamika Singh; Charan, Vanjari Sai; Dolmanan, Surani Bin; Tripathy, S.; Muralidharan, R.; Nath, Digbijoy N.

doi:10.1109/ted.2019.2893288

Cited by 17 publications

(8 citation statements)

References 37 publications

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“…Similar phenomena and explanations were also reported for Ta 2 O 5 /InAlN systems. [ 132 ] A positive move of V th after N 2 PDA was also reported for the SiON/Al 2 O 3 /AlGaN system. [ 176 ] Sun et al.…”

Section: Mis Structurementioning

confidence: 59%

“…[ 130,131 ] Meanwhile, the passivation layers on the gate region are replaced by other dielectrics which positive fixed charges density are lower than the polarization charges of GaN to maintain a high V th . [ 132,133 ] The effect of fixed charges is detailly discussed in the next section.…”

Section: Low‐damage Hemt Fabrication Technologymentioning

confidence: 99%

“…Hence, the positive fixed charges Q f with a magnitude larger than ‐ Q p2 lead to the negative Δ V th . The positive fixed charge exist between GaN and ALD Al 2 O 3 , [ 147,171,172 ] CVD SiO 2 , [ 173 ] CVD SiN x , [ 173 ] Sputtered Ta 2 O 5 , [ 132 ] and in situ MOCVD SiN x . [ 174 ] The positive fixed charges decrease the V th , and make it harder to realize normally‐off operation.…”

Section: Mis Structurementioning

confidence: 99%

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Recent Advances in GaN‐Based Power HEMT Devices

Cheng

Wang

et al. 2021

Adv Elect Materials

113

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The ever‐increasing power density and operation frequency in electrical power conversion systems require the development of power devices that can outperform conventional Si‐based devices. Gallium nitride (GaN) has been regarded as the candidate for next‐generation power devices to improve the conversion efficiency in high‐power electric systems. GaN‐based high electron mobility transistors (HEMTs) with normally‐off operation is an important device structure for different application scenarios. In this review, an overview of a series of effective approaches to improve the performance of GaN‐based power HEMT devices is given. Modified epistructures are presented to suppress defects and current leakage, and low‐damage recess‐free processes are discussed in fabricating normally‐off HEMTs. Possible effects of dielectrics on a metal–insulator–semiconductor (MIS) structure are also intensively introduced. Metal/semiconductor contact engineering is investigated, and fabrication of Au‐free ohmic contact and graphene insertion layer to enhance the device performance is emphasized. Finally, the effects of field plates are studied through the use of simulated and fabricated devices.

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Section: Mis Structurementioning

confidence: 59%

Section: Low‐damage Hemt Fabrication Technologymentioning

confidence: 99%

Section: Mis Structurementioning

confidence: 99%

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Recent Advances in GaN‐Based Power HEMT Devices

Cheng

Wang

et al. 2021

Adv Elect Materials

113

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“…Kumar et al have shown gate leakage reduction by 10 5 with Ta 2 O 5 as the gate dielectric for InAlN/GaN HEMTs. [ 28 ] Deen et al have improved DC and RF characteristics with Ta 2 O 5 as the gate dielectric for AlN/GaN HEMTs. [ 29 ] The oxides are mostly grown by chemical vapor deposition (CVD) technique and cannot be area selective.…”

Section: Introductionmentioning

confidence: 99%

High‐Performance GaN HEMTs with I_ON/I_OFF ≈10¹⁰ and Gate Leakage Current <10⁻¹¹ A mm⁻¹ Using Ta₂O₅ Dielectric

Upadhyay

Surapaneni

Yadav

et al. 2022

Physica Status Solidi (a)

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Herein, Ta2O5 high‐k gate dielectric‐based GaN high electron‐mobility transistors (HEMTs) with a high I ON/I OFF ratio and low gate leakage current are demonstrated without any significant deterioration of the other performance parameters. Ta2O5 with an average surface roughness of 1.8 nm and a dielectric constant of ≈26 are grown by sputtering and annealing in O2. The bandgap, valence, and conduction band offsets with Al0.3Ga0.7 N are 4.85, 0.24, and 0.61 eV, respectively. The reverse gate leakage current at −7 V is observed to be 1.2 ×10−10 A mm−1 for 5 nm and <1.0×10−11 A mm−1 for 20 and 30 nm oxide thickness compared to 5.0 × 10−6 A mm−1 for the control sample. This current is among the lowest ever reported for GaN‐based oxide‐HEMTs without significantly sacrificing other performances. The I ON/I OFF ratio is 2 × 109, 7 × 109, and 1 × 10 for 5, 20, and 30 nm oxide thickness, respectively, as compared to 2 × 108 for the control sample. The interface–state–density is estimated to be 1.5 × 1013 cm−2 eV−1. I DS,sat is measured to be 710, 700, and 690 mA mm−1 for 5, 20, and 30 nm Ta2O5 thickness, respectively, compared to 725 mA mm−1 for the control sample. The presence of oxide does not change the other characteristics much.

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“…Among the dielectric materials, high-k dielectric material is a promising gate insulator, because a thicker film can be used to mitigate the gate leakage problem, while still maintaining the gate capacitance. Hence, a variety of high-k dielectric materials, such as HfO 2 , 1,2 Ta 2 O 5 , 3,4 Ga 2 O 3 , 5,6 and Al 2 O 3 , 7,8 have been used in GaN-based MOSHEMTs. Al 2 O 3 film is one of most attractive high-k dielectric material used as gate insulator of GaN-based MOSHEMTs, due to its high permittivity (k≈9), wide bandgap (E g ≈ 8.0 eV), and high thermal stability.…”

mentioning

confidence: 99%

Investigation of Multiple-Mesa-Nanochannel Array GaN-Based MOSHEMTs with Al₂O₃ Gate Dielectric Layer

Jian

Lee

Chang

et al. 2021

ECS J. Solid State Sci. Technol.

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In this work, an atomic layer deposition system was used to deposit Al2O3 high-k dielectric film as the gate insulator of GaN-based metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs). By using the Al2O3 gate dielectric layer, compared to planar channel structure, the direct current, high frequency, and flicker noise performances were improved in the GaN-based MOSHEMTs with fin-nanochannel array. For the GaN-based 80-nm-wide fin-nanochannel array MOSHEMTs, they exhibited superior performances of maximum extrinsic transconductance of 239 mS mm−1, threshold voltage of –0.4 V, unit gain cutoff frequency of 7.3 GHz, maximum oscillation frequency of 14.1 GHz, normalized noise power of 2.5 × 10−14 Hz−1, and Hooge’s coefficient of 1.4 × 10−6. The enhanced performances were attributed to the features of fin-nanochannel array of better gate control capability, enhanced pinch-off effect, and better heat dissipation driven by lateral heat flow within the space between fin-channels.

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Investigation of Ta₂O₅ as an Alternative High-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math> </inline-formula> Dielectric for InAlN/GaN MOS-HEMT on Si

Cited by 17 publications

References 37 publications

Recent Advances in GaN‐Based Power HEMT Devices

Recent Advances in GaN‐Based Power HEMT Devices

High‐Performance GaN HEMTs with I_ON/I_OFF ≈10¹⁰ and Gate Leakage Current <10⁻¹¹ A mm⁻¹ Using Ta₂O₅ Dielectric

Investigation of Multiple-Mesa-Nanochannel Array GaN-Based MOSHEMTs with Al₂O₃ Gate Dielectric Layer

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Investigation of Ta2O5 as an Alternative High-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math> </inline-formula> Dielectric for InAlN/GaN MOS-HEMT on Si

Cited by 17 publications

References 37 publications

Recent Advances in GaN‐Based Power HEMT Devices

Recent Advances in GaN‐Based Power HEMT Devices

High‐Performance GaN HEMTs with ION/IOFF ≈1010 and Gate Leakage Current <10−11 A mm−1 Using Ta2O5 Dielectric

Investigation of Multiple-Mesa-Nanochannel Array GaN-Based MOSHEMTs with Al2O3 Gate Dielectric Layer

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Investigation of Ta₂O₅ as an Alternative High-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math> </inline-formula> Dielectric for InAlN/GaN MOS-HEMT on Si

High‐Performance GaN HEMTs with I_ON/I_OFF ≈10¹⁰ and Gate Leakage Current <10⁻¹¹ A mm⁻¹ Using Ta₂O₅ Dielectric

Investigation of Multiple-Mesa-Nanochannel Array GaN-Based MOSHEMTs with Al₂O₃ Gate Dielectric Layer