The need for new and better semiconductor materials for
use in
renewable energy devices motivates us to study KRuF3 and
KOsF3 fluoride materials. In the present work, we computationally
studied these materials and elaborate their varied properties comprehensively
with the assistance of density functional theory-based techniques.
To find the structural stability of these under-consideration materials,
we employed the Birch–Murnaghan fit, while their electronic
characteristics were determined with the usage of modified potential
of Becke–Johnson. During the study, it became evident from
the band-structure results of the KRuF3 and KOsF3 materials that both present an indirect semiconductor nature having
the band gap values of 2.1 and 1.7 eV, respectively. For both the
studied materials, the three essential elastic constants were determined
first, which were further used to evaluate all the mechanical parameters
of the studied materials. From the calculated values of Pugh’s
ratio and Poisson’s ratio for the KRuF3 and KOsF3 materials, both were verified to procure the nature of ductility.
During the study, we concluded from the results of absorption coefficient
and optical conduction in the UV energy range that both the studied
materials proved their ability for utilization in the numerous future
optoelectronic devices.