Investigation of structural and optical properties of GaN on flat and porous silicon

Abud, Saleh H.; Selman, Abbas M.; Hassan, Z.

doi:10.1016/j.spmi.2016.07.017

Cited by 18 publications

(7 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Meanwhile, argon and nitrogen with high purity (99.99%) were used as sputtering gas at a steady ratio of 5%. All procedure details on cleaning method of the substrates, vacuum of preparation chamber and other conditions such as pressure, RF power, deposition temperature as well as characterization instruments, operation conditions of tools and setting parameters used in this study have been briefly described in the previous work [9,10].…”

Section: Methodsmentioning

confidence: 99%

Synthesis and Characterization of GaN Nanocrystalline Thin Films on Various Substrates by RF Magnetron Sputtering

Selman

2020

ETN

View full text Add to dashboard Cite

Gallium nitride (GaN) nanocrystalline (NC) thin films (TH) were deposited on different surfaces of material as substrates; quartz, glass as well as fluorine-doped tin oxide (FTO) using radio frequency (RF) reactive magnetron sputtering method. The effects of substrate type on structural and morphological properties of GaN-NCTH were studied. X-ray diffraction analyses and field-emission scanning electron microscopy (FESEM) images showed that the GaN particles have covered all surfaces of the substrates with a smooth arrangement. The root mean square (RMS) surface roughness was 30.8, 1.45 and 1.46 nm for the GaN-NCTH deposited on FTO, glass and quartz substrates, respectively. Based on the GaN-NCTH prepared onto glass substrate, the optical bandgap was calculated to be 3.38 eV.

show abstract

Section: Methodsmentioning

confidence: 99%

Synthesis and Characterization of GaN Nanocrystalline Thin Films on Various Substrates by RF Magnetron Sputtering

Selman

2020

ETN

View full text Add to dashboard Cite

show abstract

“…The working mechanism of the RF sputtering technique was explained in detail in the reference [11]. We used RF magnetron sputter machine (PVD-Midas 3M) to produce films at DAYTAM (East Anatolian High Technology Application and Research Center).…”

Section: Methodsmentioning

confidence: 99%

n-Si / GaN ince filmlerin karakterizasyonu: azot akış hızının etkisi

Mantarcı

2020

Türk Doğa Ve Fen Dergisi

View full text Add to dashboard Cite

The GaN thin film was fabricated on n-type Si by a Radio Frequency magnetron sputtering method with applied various nitrogen (N) rates. The XRD confirmed the produced film had in a polycrystalline structure (orientations (110) and (100)). It was seen that different N rates varied structural parameters of fabricated material. The optical analysis showed that various N rates changed thin film optical-band gap energy by reason of reduced N vacancy. The AFM pictures demonstrated almost homogeneous with periodic grain arrangements, Nano-structured surface of GaN thin film. From SEM pictures, we detected agglomerations on the surface of the GaN thin film. Possible causes of them were deeply discussed. Raman results proved the corresponding characteristic E 2 (high) peak of the hexagonal GaN and exhibited that all thin films had tensile stress. Reasons of this stress were discussed. Optical, morphological, structural parameters of thin film can be improved with controlling N rates. Produced thin films can be basic material in device applications such as solar cells, Light Emitting Diode (LED). n-Si / GaN ince filmlerin fiziksel özellikleri: farklı N oranı etkisi Keywords RF saçtırma tekniği, GaN, N oranı, III-nitrür Öz: GaN ince filmi, Radyo Frekansı magnetron saçtırma yöntemi ile n-tipi Si üzerinde farklı N oranları uygulanarak üretildi. XRD analizleri üretilen filmin polikristal yapıda olduğunu (oryantasyon (110) ve (100)) teyit etmiştir. Farklı N oranlarında malzemenin yapısal parametrelerinin değiştiği görülmektedir. Optik analiz, çeşitli N oranlarının Azot boşluğunun azalması nedeniyle ince film optik bant boşluk enerjisini değiştirdiğini göstermektedir. AFM resimleri, GaN ince filminin Nano yapılı bir yüzeye sahip olduğunu ve periyodik tanecik yapısı gösterdiğini neredeyse homojen olan yapıyı göstermiştir. SEM resimlerinden GaN ince filminin yüzeyinde topaklar tespit ettik. Bunların olası nedenleri detaylı tartışıldı. Raman sonuçları, altıgen GaN'nin karşılık gelen karakteristik E 2 (yüksek) optic fonon titreşimini kanıtlamıştır ve tüm ince filmlerin sıkıştırma gerginliğine sahip olduğunu göstermiştir. Filmde oluşan bu stresin nedenleri tartışıldı. GaN ince filmin optik, morfolojik, yapısal parametreleri N oranlarının kontrol edilmesiyle iyileştirilebildiği bulunmuştur. Üretilen ince filmler, güneş pilleri, Işık Yayan Diyot (LED) gibi cihaz uygulamalarında temel malzeme olabilmektedir.

show abstract

“…As noted above, the variants of the sputtering technique were shown to be very useful for growth of III-nitrides on Si (001) [79,127,[129][130][131][132][136][137][138][139], Si (111) [96,104,140,141],…”

Section: Iii-nitrides Grown By Sputtering On Si and Zno Substratesmentioning

confidence: 99%

Emergence of high quality sputtered III-nitride semiconductors and devices

Izyumskaya¹,

Avrutin²,

Ding³

et al. 2019

Semicond. Sci. Technol.

View full text Add to dashboard Cite

This article provides an overview of recent development of sputtering method for high-quality III-nitride semiconductor materials and devices. Being a mature deposition technique widely employed in semiconductor industry, sputtering offers many advantages such as low cost, relatively simple equipment, non-toxic raw materials, low process temperatures, high deposition rates, sharp interfaces, and possibility of deposition on large-size substrates, including amorphous and flexible varieties. This review covers two major research directions: (1) ex situ sputtered AlN buffers to be used for subsequent growth of GaN-based structures by conventional techniques, such as metal-organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE), or molecular beam epitaxy (MBE), and (2) deposition of the entire III-nitride layered stacks and device structures by sputtering. Replacing conventional in situ GaN or AlN buffer layers with ex situ sputtered AlN buffers for MOCVD, HVPE, or MBE growth of IIInitride films on sapphire and silicon substrates results in the improved crystal quality through reduction in dislocation density and residual strain. Extensive efforts in the field of sputter deposition of III-nitrides resulted in crystalline quality of sputtered III-nitride films compatible with that of MOCVD and MBE grown layers despite the lower temperatures used in sputtering. For example, sputtering techniques made it possible to achieve GaN layers heavily doped with Si and Ge to electron concentrations in mid-10 20 cm −3 range with mobilities exceeding 100 cm 2 V −1 s −1 , resulting in conductivities as high as those of benchmark transparent conducting oxides such as indium tin oxide (ITO). For moderate levels of doping with Si, mobilities comparable to state-of-the-art MOCVD-grown material have been demonstrated (up to ∼1000 cm 2 V −1 s −1 ). The first promising results have been reported for devices (light emitters and field effect transistors) entirely produced by sputtering.

show abstract

Investigation of structural and optical properties of GaN on flat and porous silicon

Cited by 18 publications

References 21 publications

Synthesis and Characterization of GaN Nanocrystalline Thin Films on Various Substrates by RF Magnetron Sputtering

Synthesis and Characterization of GaN Nanocrystalline Thin Films on Various Substrates by RF Magnetron Sputtering

n-Si / GaN ince filmlerin karakterizasyonu: azot akış hızının etkisi

Emergence of high quality sputtered III-nitride semiconductors and devices

Contact Info

Product

Resources

About