2008
DOI: 10.1063/1.2894903
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Investigation of SnSe, SnSe2, and Sn2Se3 alloys for phase change memory applications

Abstract: SnSe, SnSe2, and Sn2Se3 alloys have been studied to explore their suitability as new phase change alloys for electronic memory applications. The temperature dependence of the structural and electrical properties of these alloys has been determined and compared with that of GeTe. A large electrical resistance contrast of more than five orders of magnitude is achieved for SnSe2 and Sn2Se3 alloys upon crystallization. X-ray diffraction measurements show that the transition in sheet resistance is accompanied by cr… Show more

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Cited by 164 publications
(110 citation statements)
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“…362 Lead selenide (PbSe) and tin selenide (SnSe) are semiconductors of the IV-VI group, having a wide range of applications including optical switching, optical computing, telecommunication components, photovoltaics, thermoelectrics, photodetectors, infrared detectors, mid-infrared lasers, solar or photoelectrical cells, chemical sensors, and holographic recording systems. 363,364 Bismuth selenide (BiSe) belongs to the V-VI binary semiconductor group and is interesting because of its optical, electrical and thermoelectric properties. 365,366 The X-ray diffraction patterns of the mechanochemically synthesized AB-type semiconductors with corresponding time of mechanochemical synthesis are shown in Fig.…”
Section: Selenidesmentioning
confidence: 99%
“…362 Lead selenide (PbSe) and tin selenide (SnSe) are semiconductors of the IV-VI group, having a wide range of applications including optical switching, optical computing, telecommunication components, photovoltaics, thermoelectrics, photodetectors, infrared detectors, mid-infrared lasers, solar or photoelectrical cells, chemical sensors, and holographic recording systems. 363,364 Bismuth selenide (BiSe) belongs to the V-VI binary semiconductor group and is interesting because of its optical, electrical and thermoelectric properties. 365,366 The X-ray diffraction patterns of the mechanochemically synthesized AB-type semiconductors with corresponding time of mechanochemical synthesis are shown in Fig.…”
Section: Selenidesmentioning
confidence: 99%
“…Tin Selenide (SnSe) is a narrow band gap, binary IV-VI semiconductor, suitable for various optoelectronic applications like memory switching devices, photovoltaic, light emitting devices (LED), and holographic recording systems [1][2][3]. Large availability of constituents of SnSe compound in nature has been raised attention for the cost effective solution in photovoltaic applications.…”
Section: Introductionmentioning
confidence: 99%
“…Thin films of metal chalcogenides have attracted considerable attention due to theirs application prospects, in infrared optoelectronic devices, radiation detectors, memory devices and holographic recording systems [1][2][3][4][5][6] . In particular, binary compounds such as tin monoselenide, SnSe, and tin diselenide, SnSe 2 , are seen by the community as potential candidates for photovoltaic applications 7 .…”
Section: Introductionmentioning
confidence: 99%