Investigation of <scp>NV</scp> centers in nano‐ and ultrananocrystalline diamond pillars

Petkov, E.E.; Rendler, Torsten; Petkov, Christo; Schnabel, Florian; Reithmaier, Johann Peter; Wrachtrup, Jörg; Popov, C.; Kulisch, W.

doi:10.1002/pssa.201329282

Cited by 14 publications

(13 citation statements)

References 37 publications

(55 reference statements)

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“…The pillars at the edge of an array were slightly stronger etched than the pillars surrounding the center, which can be seen by comparing their sidewalls in Figure . Those at the edge were more tapered, however this effect is far less pronounced compared to a previous study, where we investigated single nanopillars separated by five micrometers and the top diameters were significantly smaller than the bottom ones showing pronounced tapering. This could be explained by the higher package density of the pillars in the current study: Their overall exposure to the plasma in the ICP RIE step is limited which reduces overetching and mask erosion.…”

Section: Resultscontrasting

confidence: 73%

“…ii) in situ doping during the diamond growth by introducing precursor gas mixtures into the reaction chamber, e.g. Si containing gases like SiH 4 for the creation of SiV centers or nitrogen gas for the formation of NV centers: either in a controlled way for nanometer‐precision depth control of the generated NV centers (delta‐doping) or distributed within the diamond film by a background pressure of nitrogen in the chamber . In the case of SiV centers, also solid precursor sources are possible, e.g.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, NCD films deposited on silicon wafers have been used as starting material. We have transferred and optimized our established fabrication method for single diamond nanopillars to highly dense arrays of nanopillars. Proximity correction software of electron beam lithography (EBL) and exposure dose variations were included for realization of closely packed features.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication of Nanopillars on Nanocrystalline Diamond Membranes for the Incorporation of Color Centers

Schmidt

Bernardoff

Singer

et al. 2019

Physica Status Solidi (a)

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A fabrication process of dense arrays of one-dimensional diamond nanostructures (diamond nanopillars) integrated on nanocrystalline diamond (NCD) membranes is implemented with an etched-through marker hole in the membrane in the center of the array. NCD films deposited on silicon substrates are used as starting material. The main fabrication steps consist of structuring the NCD film by electron beam lithography (EBL) applying aluminum as a hard mask and subsequent inductively coupled O 2 plasma reactive ion etching (ICP RIE), followed by structuring of the silicon substrate from the backside to open a NCD membrane. The developed fabrication procedure for nanostructured membranes can be transferred to monocrystalline diamond and implemented for deterministic single ion implantation into the nanopillars for generation of nitrogen-vacancy (NV) or silicon-vacancy (SiV) centers. For this purpose, the etched marker hole can be applied for alignment in the implantation process. Such diamond nanostructures with integrated color centers could play an important role in the development of novel quantum memory devices.

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Section: Resultscontrasting

confidence: 73%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Fabrication of Nanopillars on Nanocrystalline Diamond Membranes for the Incorporation of Color Centers

Schmidt

Bernardoff

Singer

et al. 2019

Physica Status Solidi (a)

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“…After the deposition of a 100 nm chromium layer and a standard lift‐off process, a circular‐shaped chromium mask array was formed. Then, a short ICP etching stage (for 1/2 min) was performed with oxygen plasma for the nanopillar fabrication (200 nm high pillars) applying process parameters (1000 W ICP power, 200 W radio frequency (RF) power, 10 sccm O 2 flow, and 5 mTorr {0.7 Pa} working pressure) optimized in a previous work . After the formation of the nanopillar arrays, the chromium mask was removed using chromium etchant (Figure a of the EDS measurement clearly demonstrated that the chromium mask was successfully removed from the pillar apex).…”

Section: Methodsmentioning

confidence: 99%

Deterministic Arrays of Epitaxially Grown Diamond Nanopyramids with Embedded Silicon‐Vacancy Centers

Jaffe

Felgen

Gal

et al. 2018

Advanced Optical Materials

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In contrast to the more common nitrogen-vacancy (NV) center in diamond, the SiV possesses bright narrow band and spectrally stable optical transition concentrated (70% of the fluorescence) in its zero phonon line (ZPL) protected by inversion symmetry, even at room temperature. [4,5] Despite these attractive characteristics, some properties hinder the SiV applicability: short coherence times (nanosecond scale), limited mainly by coupling to the thermal acoustic phonon bath [6] and low extraction efficiency from the high-index diamond substrate. Different methods for mitigating these issues have been investigated in recent years, [1,[7][8][9][10] but currently there is no apparent approach to exploit the SiV superb optical properties at room temperature and at the same time to increase its photon outcoupling without compromising its optical quality and coherence. The use of nanodiamonds or nanostructures prepared by a top-down approach can mitigate the issue of total internal reflection within the diamond, but at the same time may introduce additional decoherence [11] and optical instability mechanisms attributed to poor surface quality (surface defects containing spins, charge traps, nondiamond phases, surface termination of atoms and groups [12] ) as a result of the synthesis or structuring process. The SiVs can be formed in the diamond host via ion implantation of silicon ions [1,13] or by introducing silicon atoms from a solid or gas precursor during the growth stage of diamond layers. [14,15] The latter is considered to better preserve the quality of the diamond layer by avoiding implantation damages and promoting a smaller amount of vacancy clusters and nonradiative sites which can otherwise hinder the SiV applicability. Herein, the ability to sculpt nanostructures by a bottom-up approach enables the creation of higher quality complex structures that are not accessible via top-down fabrication techniques. [16][17][18] In particular, this concerns the fabrication of highly confined and deterministic nanostructures hosting an atom-like system that maintain the original substrate quality -a critical prerequisite for quantum information and sensing applications. Here, we present a robust and deterministic template-assisted bottom-up process for the creation of high-quality nanoscale diamond pyramids incorporating SiVs.The negatively charged silicon-vacancy center (SiV) in diamond is a potential high-quality source of single-indistinguishable photons for quantum information processing and quantum electrodynamics applications. However, when embedded in bulk diamond, this emitter suffers from both, relatively low extraction efficiency attributed to total internal reflection as well as nondeterministic location. On the other hand, its implementation in nanodiamonds is impeded by optical dephasing owing to their degraded surface quality. Here a robust and deterministic template-assisted bottom-up process for the creation of high-quality diamond nanopyramids incorporating SiVs is reported. This method employs a predefi...

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“…Additionally to that, rectangular marker structures were written in each row nearby the 50 nm pillars to make localization of these small structures easier. For the development of the structures a mixture of methyl isobutyl ketone (MIBK) and IPA 1:3 was applied for 165 s followed by a cleaning step in IPA for 30 s …”

Section: Methodsmentioning

confidence: 99%

Homoepitaxial Diamond Structures with Incorporated SiV Centers

Felgen

Naydenov

Jelezko

et al. 2018

Physica Status Solidi (a)

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The incorporation of SiV centers during diamond overgrowth on top of partly covered monocrystalline diamond pillars with diameters down to 200 nm are reported. The pillars themselves are prepared via electron beam lithography and inductively coupled plasma reactive ion etching. Then they are covered with a spin‐on‐glass (SOG) (perhydropolysilazane, PHPS) still jutting the apices of the pillars. After a short overgrowth step and removal of the residual SOG the optical investigations reveal the presence of ensembles of SiV centers in the overgrown part of the pillars, a specific location of the centers, and a very strong PL signal.

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Investigation of NV centers in nano‐ and ultrananocrystalline diamond pillars

Cited by 14 publications

References 37 publications

Fabrication of Nanopillars on Nanocrystalline Diamond Membranes for the Incorporation of Color Centers

Fabrication of Nanopillars on Nanocrystalline Diamond Membranes for the Incorporation of Color Centers

Deterministic Arrays of Epitaxially Grown Diamond Nanopyramids with Embedded Silicon‐Vacancy Centers

Homoepitaxial Diamond Structures with Incorporated SiV Centers

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