2018
DOI: 10.1002/pssa.201800371
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Homoepitaxial Diamond Structures with Incorporated SiV Centers

Abstract: The incorporation of SiV centers during diamond overgrowth on top of partly covered monocrystalline diamond pillars with diameters down to 200 nm are reported. The pillars themselves are prepared via electron beam lithography and inductively coupled plasma reactive ion etching. Then they are covered with a spin‐on‐glass (SOG) (perhydropolysilazane, PHPS) still jutting the apices of the pillars. After a short overgrowth step and removal of the residual SOG the optical investigations reveal the presence of ensem… Show more

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Cited by 10 publications
(8 citation statements)
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References 38 publications
(43 reference statements)
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“…The realized nanopillars host single SiV centers with high spectral stability [ 55 ]. In a similar approach, pre-structured SCD pillar were coated with spin-on-glass (perhydropolysilazane) and homoepitaxially overgrown via CVD method, to obtain localized ensembles of SiV − s in the overgrown part of nanopillars [ 56 ]. Creating color centers during growth potentially enhances their spectral stability as well as spin properties by avoiding implantation induced damage (see also Section 2.5 ) [ 55 ].…”
Section: Photonic Componentsmentioning
confidence: 99%
“…The realized nanopillars host single SiV centers with high spectral stability [ 55 ]. In a similar approach, pre-structured SCD pillar were coated with spin-on-glass (perhydropolysilazane) and homoepitaxially overgrown via CVD method, to obtain localized ensembles of SiV − s in the overgrown part of nanopillars [ 56 ]. Creating color centers during growth potentially enhances their spectral stability as well as spin properties by avoiding implantation induced damage (see also Section 2.5 ) [ 55 ].…”
Section: Photonic Componentsmentioning
confidence: 99%
“…Generally, silicon atoms are already present in most of the CVD fabricated diamond films via diffusion from a silicon-containing substrate and/or from the silica reactor windows [32]. This process creates SiV centers without further annealing and ion implantation procedures [33]. By balancing a dopant source, the depth of impurities can be controlled in this method.…”
Section: Introductionmentioning
confidence: 99%
“…The growth process generally takes place at elevated temperatures, but, upon cooling, the compressive stress resulting from the thermal expansion coefficient mismatch between the substrate and the diamond can induce structural damages to the film (28).Generally, silicon atoms are already present in most of the CVD fabricated diamond films via diffusion from a silicon-containing substrate and/or from the silica reactor windows (32). This process creates SiV centers without further annealing and ion implantation procedures (33). By balancing a dopant source, the depth of impurities can be controlled in this method.…”
Section: Introductionmentioning
confidence: 99%
“…To yield an efficient outcoupling from the zero-phonon line (ZPL) of the color centers and improve the photon collection efficiency, various light-confining architectures can be used, such as Fabry-Pérot microcavities [30,31], nanopillars [32][33][34] or photonic crystal cavities [35]. In particular, cavities with small mode volumes and high quality factors can lead to selective and strong Purcell enhancement of the ZPL emission, an important ingredient for coherent single-photon sources, fast spin readout and an efficient creation of spin-photon entanglement.…”
Section: Introductionmentioning
confidence: 99%