Investigation of Sb65Se35/Sb multilayer thin films for high speed and high thermal stability application in phase change memory

Non-isothermal crystallization kinetics and memory switching properties of Tl-Se-Ge-Sb chalcogenide semiconductor alloy for thermally stable phase change memory applications

“…Furthermore, the average values of ∆T, H r and SP are 44.49 K, 0.332 and 1.70 K for TSG-Sb whereas their values are 87.8 K, 0.717 and 2.56 K for TSG [9], respectively. These values are relatively lower than that obtained previously for TSG which indicates that TSG−Sb is easily divertible in nature and suggests its ability for using in phase change memory (PCM) devices [4,5,29,50]. Besides the values of H r and SP indicate that the studied composition has a high tendency to produce glass and thermally stable.…”

“…Amorphous chalcogenide glasses (ChGs) are gaining interest due to their diverse optical and electronic applications, including memory switching devices, optical data storage, IR communication systems, solar cells, and linear and nonlinear integrated optical elements [1][2][3]. Phase-change memories (PCMs) are one of the most promising applications of ChGs, as they have two distinct structural forms: amorphous and crystalline [4,5]. The metastable amorphous states can relax towards equilibrium and transform into more stable crystalline states [5].…”

Simultaneously higher thermal stability and lower resistance drifting for Sb/In48.9Sb15.5Te35.6 nanocomposite multilayer films

“…11,12 The references demonstrated that Sb had an ultra-fast phase transition rate but poor thermal stability. 13 Many Sb-rich phase change materials had been developed to include multilayer composite phase change films, such as Sb 65 Se 35 /Sb, 14 Sb/SiO 2 (ref. 15) and GeTe/Sb.…”