Investigation of rapid-thermal-oxidized porous silicon

Abstract

Some preliminary observations of the rapid thermal oxidation of porous silicon, and the rapid thermal nitriding of oxidized porous silicon

Effects of thermal oxidation on the photoluminescence properties of porous silicon

“…The intensity in Fig. 1b drops rapidly at 300 3 C and then starts to increase at around 700 3 C, peaking at 1000 3 C. The similar temperature dependence of PL intensity has also been reported in the literature [6,15,16]. The abrupt decrease in the PL intensity at around 300 3 C is thought to be due to the formation of surface defects generated by the desorption of hydrogen atoms.…”

Fabrication and chemical surface modification of mesoporous silicon for biomedical applications

“…During the first years after the report of photoluminescence by Canham in 1990 [3], the research of stabilizing methods was focused on the stabilization of luminescence properties. Different kinds of oxidations were studied, like thermal, anodic, photo and chemical oxidations [39][40][41][42][43]. Also, thermal annealing of the PSi in nitrogen atmosphere and nitridation of the surface with NH 3 were frequently studied [44][45][46][47].…”

Effect of rapid thermal treatment on photoluminescence of surface passivated porous silicon

“…However, the large amounts of highly reactive internal surface of Por-Si compared with bulk Si increase drastically its sensitivity to air. To overcome the degradation of PL intensity with time, post-treatment processes, such as rapid thermal oxidation [2][3][4][5][6], rapid thermal processes (RTPs) under NH 3 or N 2 atmosphere [7][8][9], high-and low-temperature processes under different atmospheres [10][11][12][13], are used to passivate Por-Si. These post-treatment processes greatly enhance and stabilize the PL of Por-Si.…”