Investigation of properties of transparent and conducting V-doped Ga2O3 films

Controllability of β-Ga2O3 single crystal conductivity by V doping

“…The two peaks located at 519.42 and 518.52 eV correspond to Ga LMM and V 5+ 2p 3/2 , respectively. 46,47 Moreover, the valence state of the V element in the 1.00 mol% V-doped β-Ga 2 O 3 single crystal remained unchanged and still maintained a +5 valence. It is reported that V-doped β-Ga 2 O 3 films contain V 5+ and V 4+ ions, and V 5+ ions accounted for a high proportion.…”

Recent progress on the effects of impurities and defects on the properties of Ga2O3

“…They found that the electronic properties of doped β-Ga 2 O 3 were altered. 244,245 Particularly, it was found that Nb would form the shallow donor level in β-Ga 2 O 3 . Zhou et al proposed that the carrier concentrations could be modulated over the range of 9.55 × 10 16 –1.8 × 10 19 cm −3 in Nb-doped β-Ga 2 O 3 .…”

Vanadium doped beta-Ga2O3 single crystals: Growth, Optical and Terahertz characterization

“…While a theoretical study of transition metal (TM) doping in β -Ga 2 O 3 has been reported 12 , it has been difficult to introduce dopants into a wide bandgap semiconductor like Ga 2 O 3 . The feasibility of doping Ga 2 O 3 with vanadium in RF magnetron sputtered thin films has been studied 13 , the film quality obtained was rather mediocre. The synthesis of bulk single crystals of vanadium-doped gallium oxide has not been reported so far.…”