Investigation of Potential-Induced Degradation in n-PERT Bifacial Silicon Photovoltaic Modules with a Glass/Glass Structure

Luo, Wei; Khoo, Yong Sheng; Singh, Jai Prakash; Wong, Johnson; Wang, Yan; Aberle, Armin G.; Ramakrishna, Seeram

doi:10.1109/jphotov.2017.2762587

Cited by 32 publications

(35 citation statements)

References 24 publications

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“…PID‐s mainly impacts the fill factor (FF) of solar cells/modules due to a significant reduction in the shunt resistance ( R sh ), whereas the open‐circuit voltage ( V oc ) and short‐circuit current ( I sc ) are relatively less impacted. On the other hand, for the n‐type wafer‐based solar cells with a p + /n (such as, n‐PERT and IBC with a floating emitter) or n + /n (such as SunPower IBC) front junction, the surface polarization effect (also known as degradation of the surface passivation, PID‐p) is commonly believed to be responsible for performance degradation . This degradation process leads to a significant drop in I sc and V oc , whereas FF is only marginally influenced.…”

Section: Introductionmentioning

confidence: 62%

“…This explains the partial recovery of the device performance after 100 hours of PID testing (relative to 40 hours, Figure ). Note that, the inversion phenomenon was not observed on the front‐side of n‐type PERT bifacial silicon modules . The difference may be attributed to the fact that the rear side of bifacial PERC solar cells has no diffusion layer, so there are fewer carriers to compensate to achieve inversion.…”

Section: Resultsmentioning

confidence: 99%

“…Three types of modules were fabricated, as summarized in Table . The ethylene‐vinyl acetate copolymer (EVA) films have good resistance to PID‐s based on the manufacturer's datasheet (volume resistivity >1 × 10 15 Ωcm); the polyolefin elastomer (POE) films are highly resistant to PID‐s, as verified in our previous work; the transparent backsheet foil has a structure of coating/polyester/primer; and the glass is of the low‐iron type. The Al foil PID test method was used to accelerate the progression of PID in PV modules, as shown in Figure .…”

Section: Experimental Designmentioning

confidence: 99%

“…PID has been reported in various silicon PV technologies, such as the conventional p‐type solar cells (aluminium back surface field, Al‐BSF), n‐type PERT solar cells, and interdigitated back‐contact (IBC) solar cells . For p‐type solar cells with an n + /p front junction, PID‐shunting (PID‐s) has been identified as the root cause for PV efficiency loss when the solar cells are negatively biased relative to the frame or the front module surface .…”

Section: Introductionmentioning

confidence: 99%

“…But in case of full‐size modules, FF also falls largely because of the mismatch between the various degraded cells . A recent study also demonstrated that a noticeable loss in FF (more than 3% absolute loss) was induced to n‐type PERT bifacial silicon solar cells after accelerated PID testing . Furthermore, PV modules that are subjected to the surface polarization effect (or PID‐p) often reach a saturation state where a maximum degradation in maximum power ( P mpp ), I sc and V oc is caused …”

Section: Introductionmentioning

confidence: 99%

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Elucidating potential‐induced degradation in bifacial PERC silicon photovoltaic modules

Luo

Hacke

Terwilliger

et al. 2018

Progress in Photovoltaics

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This paper elucidates the behavior and underlying mechanism of potential‐induced degradation (PID) on the rear side of p‐type monocrystalline silicon bifacial passivated emitter and rear cell (PERC) photovoltaic modules. At 50°C, 30% relative humidity, and −1000 V bias to the solar cells with aluminium foil on the rear glass surface, the rear‐side performance of bifacial PERC modules at standard testing conditions degraded dramatically after 40 hours with a 40.4%, 36.2%, and 7.2% loss in maximum power (Pmpp), short‐circuit current (Isc), and open‐circuit voltage (Voc), respectively. The front‐side standard testing condition performance, on the other hand, showed less degradation; Pmpp, Isc, and Voc dropped by 12.0%, 5.2%, and 5.3%, respectively. However, negligible degradation was observed when the solar cells were positively biased. Based on I‐V characteristics, electroluminescence, external quantum efficiency measurements, and the effective minority‐carrier lifetime simulation, the efficiency loss is shown to be caused by the surface polarization effect; positive charges are attracted to the passivation/antireflection stack on the rear surface and reduce its field effect passivation performance. Extended PID testing to 100 hours showed an increase in device performances (relative to 40 hours) due to the formation of an inversion layer along the rear surface. In addition, replacing ethylene‐vinyl acetate copolymer with polyolefin elastomer films significantly slows down the progression of PID, whereas a glass/transparent backsheet design effectively protects the rear side of bifacial PERC modules from PID. Furthermore, PID on the rear side of bifacial PERC modules is fully recoverable, and light greatly promotes recovery of the observed PID.

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Section: Introductionmentioning

confidence: 62%

Section: Resultsmentioning

confidence: 99%

Section: Experimental Designmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Elucidating potential‐induced degradation in bifacial PERC silicon photovoltaic modules

Luo

Hacke

Terwilliger

et al. 2018

Progress in Photovoltaics

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Mechanistic Understanding of Polarization‐Type Potential‐Induced Degradation in Crystalline‐Silicon Photovoltaic Cell Modules

Yamaguchi

Masuda

Marumoto

et al. 2022

Adv Energy and Sustain Res

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Potential‐induced degradation (PID) has been identified as a central reliability issue of photovoltaic (PV) cell modules. Several types of PID depend on the cell structure. Among those types, polarization‐type PID, which is characterized by reductions in short‐circuit current density (JSC) and open‐circuit voltage (VOC), is the fastest PID mode. Additionally, polarization‐type PID occurs readily at room temperature or at markedly low magnitudes of electric potential difference. Therefore, polarization‐type PID is a severe difficulty affecting silicon PV modules. Recently, degradation behavior, preventive measures, and mechanism have been investigated. As described herein, mechanistic aspects of polarization‐type PID are specifically examined and details of a recently proposed model involving a charge accumulation process at K centers in SiNx dielectric layers: the K‐center model are discussed. The K‐center model consistently explains previously reported results of experimentation, which indicates the validity of this model. Discussions presented herein are expected to improve the mechanistic understanding of polarization‐type PID in the PV community and to stimulate further discussions and verifications of the model.

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Review of Potential‐Induced Degradation in Bifacial Photovoltaic Modules

Molto

Mahmood

et al. 2023

Energy Tech

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Bifacial modules are increasingly deployed in the field and are expected to represent half of the market share within 10 years. Their rear structure differs from monofacial modules to allow additional light absorption. However, it brings new reliability challenges to address. In particular, the risk of potential‐induced degradation (PID) is increased as both module sides are impacted. Different PID processes have been identified in the literature: shunting type (PID‐s), polarization type (PID‐p), Na penetration type, and corrosion type (PID‐c). Their occurrence depends on the photovoltaic system configuration as well as the module's materials. Apart from PID‐s, PID processes are not well understood and extensive research is needed to elucidate the PID scenario and underlying mechanisms. Herein, current knowledge about PID processes and their impact on the main bifacial modules in the market are gathered with the aim to guide future research. Bifacial module technologies and leakage current paths leading to PID are described. Indoor and outdoor PID testing methods are detailed. For each bifacial module technology, the PID processes are investigated with their indicators, mechanism and recovery process. PID‐impacting factors and limitation solutions are finally reported and a state of the art on PID modeling is presented.

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Investigation of Potential-Induced Degradation in n-PERT Bifacial Silicon Photovoltaic Modules with a Glass/Glass Structure

Cited by 32 publications

References 24 publications

Elucidating potential‐induced degradation in bifacial PERC silicon photovoltaic modules

Elucidating potential‐induced degradation in bifacial PERC silicon photovoltaic modules

Mechanistic Understanding of Polarization‐Type Potential‐Induced Degradation in Crystalline‐Silicon Photovoltaic Cell Modules

Review of Potential‐Induced Degradation in Bifacial Photovoltaic Modules

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