Investigation of porous silicon carbide as a new material for environmental and optoelectronic applications

Keffous, A.; Gabouze, N.; Cheriet, A.; Belkacem, Y.; Boukezzata, A.

doi:10.1016/j.apsusc.2010.03.029

Cited by 13 publications

(7 citation statements)

References 26 publications

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“…A nanocrystalline structure (but with different phases) was recently reported by Galvão et al [ 19 ] for SiC films deposited by HiPIMS at ambient temperature. The XRD results reported in this paper are more consistent with those reported by Craciun [ 30 ] and Keffous [ 31 ]. The peak positioned at 33.0° corresponds to the hexagonal phase 6H-SiC (006) and cubic phase 3C-SiC (111) [ 30 ], while the peak from 61.7° is assigned to the rhombohedral SiC (320) phase [ 31 ].…”

Section: Resultssupporting

confidence: 92%

“…The XRD results reported in this paper are more consistent with those reported by Craciun [ 30 ] and Keffous [ 31 ]. The peak positioned at 33.0° corresponds to the hexagonal phase 6H-SiC (006) and cubic phase 3C-SiC (111) [ 30 ], while the peak from 61.7° is assigned to the rhombohedral SiC (320) phase [ 31 ]. As the gas pressure increases, the films’ structure changes from a hexagonal-preferential orientation to a rhombohedral-preferential orientation.…”

Section: Resultssupporting

confidence: 92%

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Room Temperature Deposition of Nanocrystalline SiC Thin Films by DCMS/HiPIMS Co-Sputtering Technique

Tiron

Ursu²,

Cristea

et al. 2022

Nanomaterials

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Due to an attractive combination of chemical and physical properties, silicon carbide (SiC) thin films are excellent candidates for coatings to be used in harsh environment applications or as protective coatings in heat exchanger applications. This work reports the deposition of near-stoichiometric and nanocrystalline SiC thin films, at room temperature, on silicon (100) substrates using a DCMS/HiPIMS co-sputtering technique (DCMS—direct current magnetron sputtering; HiPIMS—high-power impulse magnetron sputtering). Their structural and mechanical properties were analyzed as a function of the process gas pressure. The correlation between the films’ microstructure and their mechanical properties was thoroughly investigated. The microstructure and morphology of these films were examined by appropriate microscopic and spectroscopic methods: atomic force microscopy (AFM), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), and Raman spectroscopy, while their mechanical and tribological properties were evaluated by instrumented indentation and micro-scratch techniques. The lowest value of the working gas pressure resulted in SiC films of high crystallinity, as well as in an improvement in their mechanical performances. Both hardness (H) and Young’s modulus (E) values were observed to be significantly influenced by the sputtering gas pressure. Decreasing the gas pressure from 2.0 to 0.5 Pa led to an increase in H and E values from 8.2 to 20.7 GPa and from 106.3 to 240.0 GPa, respectively. Both the H/E ratio and critical adhesion load values follow the same trend and increase from 0.077 to 0.086 and from 1.55 to 3.85 N, respectively.

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Section: Resultssupporting

confidence: 92%

Section: Resultssupporting

confidence: 92%

Room Temperature Deposition of Nanocrystalline SiC Thin Films by DCMS/HiPIMS Co-Sputtering Technique

Tiron

Ursu²,

Cristea

et al. 2022

Nanomaterials

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“…These excellent characteristics are unmatched by traditional silicon-based semiconductors. SiC power semiconductor devices have attracted people's attention and has become one of the third-generation semiconductor materials [1][2]. SiC devices, especially 4H-SiC metal semiconductor field effect transistors (MESFETs), occupy a major position in applications, and have become one of the research hotspots in the field of microwave power devices in recent years.…”

Section: Introductionmentioning

confidence: 99%

New 4H-SiC Metal Semiconductor Field Effect Transistors with Double Symmetric Step Buried Oxide Layer for High Energy Efficiency Applications

Zhu¹,

Jia²,

Dong³

et al. 2021

Preprint

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A novel 4H-SiC metal semiconductor field effect transistor (MESFET) device with double symmetric step buried oxide layer is proposed and the mechanism is studied through TCAD simulation. The step buried oxide layer is mainly to reduce the current leakage to the substrate and improve drain current. At the same time, the presence of the oxide layer changes the electric field distribution, reduces the electric field concentration phenomenon, and the breakdown voltage is improved. Due to the presence of the step buried oxide layer, the charge distribution of the device is changed, and the frequency characteristics are improved. When the step buried oxide channel is under the optimized parameter condition, compared with the traditional double-recessed structure 4H-SiC MESFET (DR 4H-SiC MESFET), the direct current (DC) characteristics of the new structure are improved, and the breakdown voltage is increased by 14% to reach 183 V. In radio frequency (RF) characteristics, cut-off frequency is 24.4 GHz, an increase of 11.9 %; maximum operating frequency is 63.9 GHz, an increase of 20.3%; the maximum power added efficiency (PAE) in the L-band and S-band reaches 63.5 %, PAE is 23.7 % higher than the DR structure. At the end of this paper, the new structure is verified for high-energy-efficiency, and the results show that the new structure has great potential in high-frequency applications.

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“…Anodic porous etching on Si and Ge was first reported by A. Uhlir at Bell Labs in 1956 [2]. After that, various compound semiconductors, such as GaAs [3][4][5], InP [6][7][8][9], GaP [10,11], GaN [12][13][14] and SiC [15][16][17] were studied. For porous InP in particular, it is known that straight pores can be uniformly formed in the vertical direction under optimal conditions [18,19].…”

Section: Introductionmentioning

confidence: 99%

Investigation on optical absorption properties of electrochemically formed porous InP using photoelectric conversion devices

Kumazaki¹,

Kudo²,

Yatabe³

et al. 2013

Applied Surface Science

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We investigated the optical absorption properties of InP porous structures formed by the electrochemical process using photoelectric conversion (PC) devices formed on p-n junction substrates. The photocurrent measurements revealed that the current from PC devices changed in response to the incident light power and the thickness of the top layer on the p-n interface. Since the photocarriers contributing to the observed photocurrents are excited by the photons reaching the p-n interface through the top layer, the photocurrents give us information on the optical absorption properties of the top layer. The photocurrents observed on a porous device with a porous structure in the top layer were lower than that of a non-porous device, indicating that the absorption properties of InP were enhanced after the formation of porous structures. This phenomenon can be explained in terms of absorption coefficient, α, increased by the light scattering and the sub-bandgap absorption in the porous layer.

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Investigation of porous silicon carbide as a new material for environmental and optoelectronic applications

Cited by 13 publications

References 26 publications

Room Temperature Deposition of Nanocrystalline SiC Thin Films by DCMS/HiPIMS Co-Sputtering Technique

Room Temperature Deposition of Nanocrystalline SiC Thin Films by DCMS/HiPIMS Co-Sputtering Technique

New 4H-SiC Metal Semiconductor Field Effect Transistors with Double Symmetric Step Buried Oxide Layer for High Energy Efficiency Applications

Investigation on optical absorption properties of electrochemically formed porous InP using photoelectric conversion devices

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