Investigation of polymethylmethacrylate resist residues using photoelectron microscopy

Abstract

Articles you may be interested inSelf-assembled monolayers of poly(ethylene glycol) siloxane as a resist for ultrahigh-resolution electron beam lithography on silicon oxide Nonstatistical degradation and development characteristics of poly(methylmethacrylate) based resists during electron beam exposure Electron beam lithography of nanostructures using 2-propanol:water and 2-propanol:methyl isobutyl ketone as developers for poly-methylmethacrylate J.Accurate critical dimension control by using an azide/novolak resist process for electron-beam lithography Quantitative photoelectron spectromicroscopy has been used to study polymethylmethacrylate ͑PMMA͒ resist residues on SiO 2 surfaces after electron beam exposure and resist development. It was found that correctly exposed and developed PMMA leaves residues with an average thickness of about 1 nm. Higher exposure doses result in the decrease in film thickness, but with residues of about 0.5 nm. The technique can be applied as a powerful tool for surface and interface quality control in technology of electronic devices.

Optimized fabrication and characterization of carbon nanotube spin valves

“…This is a wellknown issue not specific to nanospintronic devices. [18][19][20] In semiconductor device fabrication, or when contacting metallic parts of the device, the residues can be removed before the next metal deposition by standard cleaning procedures like oxygen plasma etching or Ar sputtering. However, most of these procedures also remove or damage the CNT and graphene parts of a device.…”

Gas‐Phase Anion Exchange for Multisegment Heterostructured CsPb(Br1−xClx)3 Perovskite Nanowires

“…A possible cause is PMMA‐residuals remaining on the NW surface as the development solvents are generally not sufficient to obtain a completely clean surface in EBL. [ 21 ] An effect of the PMMA layer acting as a Cl‐soak or EBL altering the NW surface; and hence, anion exchange behaviour can be ruled out. NWs deposited onto a PMMA substrate and NWs only exposed to an e‐beam dose show exchange behavior as shown in Figure 2a,b.…”

Investigation of CSAR 62, a new resist for electron beam lithography

“…12,13 Consequently, the roughness of the residual layers is expected to give a useful indication of their thickness. The pattern used was simply the resist contrast test pattern.…”