Investigation of phase shift mask distortion effect

Du, Jinglei; Cui, Zheng; Yuan, Xiaocong; Guo, Yongkang

doi:10.1016/s0167-9317(02)00569-5

Cited by 5 publications

(3 citation statements)

References 3 publications

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“…In a similar manner to PSL techniques, interference‐lithography‐based maskless techniques (e.g., laser interference lithography) are also capable of fabricating ordered line patterns in these dimensions. PSL offers big advantages in terms of precision on 4 inch wafers or even larger ones, which allows an additional alignment for complex nanostructures 10, 11. The PSL mask is fabricated by a normal photolithography layout and the design is composed of step lines of 1 μm separation and 1 cm length, with a depth adjusted to the desired interference enhancement.…”

Section: Resultsmentioning

confidence: 99%

Large‐Scale Nano Piezo Force Position Arrays as Ultrahigh‐Resolution Micro‐ and Nanoparticle Tracker

Subannajui¹,

Menzel²,

Güder³

et al. 2012

Adv Funct Materials

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Defining the position of an object on a planar substrate by force sensors is a common technology nowadays. Many products are commercialized worldwide, which make use of force sensors, especially, for instance, touchpads. Here advanced lithography processes together with piezoelectric materials are demonstrated to fabricate an extremely high resolution force sensor. The approach combines a large array of nanoscale piezoelectric lines fabricated on Si wafer by phase‐shift lithography and atomic‐layer‐deposition‐based spacer lithography techniques. These key lithography methods are utilized to fabricate ultralong (cm range) nanolines on the wafer scale. ZnO and P(VDF‐TrFE) are selected here as materials for piezoelectric signal generators. The detection mechanisms are explained and simulations combined with experimental data are demonstrated to prove the concept. The signal generated when an object approaches one single line is in the nanoampere range. The result enables a new and simple path for a device fabrication, which defines the position with micro‐ and nanometer resolution and can be used, for example, as micro‐ and nanoparticle trackers.

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Section: Resultsmentioning

confidence: 99%

Large‐Scale Nano Piezo Force Position Arrays as Ultrahigh‐Resolution Micro‐ and Nanoparticle Tracker

Subannajui¹,

Menzel²,

Güder³

et al. 2012

Adv Funct Materials

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“…Phase shift lithography (PSL), a simple approach, is one of the resolution enhancing techniques, which is still based on conventional optical lithography. 13 The concept was originally invented due to the increasing demand of size reduction in the electronics industry. The principle behind the PSL is based on destructive interference and is used to generate subwavelength dark lines as a lithography pattern.…”

mentioning

confidence: 99%

“…Phase shift lithography (PSL), a simple approach, is one of the resolution enhancing techniques, which is still based on conventional optical lithography . The concept was originally invented due to the increasing demand of size reduction in the electronics industry.…”

mentioning

confidence: 99%

Bringing Order to the World of Nanowire Devices by Phase Shift Lithography

2010

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Semiconductor nanowire devices have several properties which match future requirements of scaling down the size of electronics. In typical microelectronics production, a number of microstructures are aligned precisely on top of each other during the fabrication process. In the case of nanowires, this mandatory condition is still hard to achieve. A technological breakthrough is needed to accurately place nanowires at any specific position and then form devices in mass production. In this article, an upscalable process combining conventional micromachining with phase shift lithography will be demonstrated as a suitable tool for nanowire device technology. Vertical Si and ZnO nanowires are demonstrated on very large (several cm(2)) areas. We demonstrate how the nanowire positions can be controlled, and the resulting nanowires are used for device fabrication. As an example Si/ZnO heterojunction diode arrays are fabricated. The electrical characterization of the produced devices has also been performed to confirm the functionality of the fabricated diodes.

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