Investigation of optical and electrical properties of ZnO thin films

Lai, Li‐Wen; Lee, Ching-Ting

doi:10.1016/j.matchemphys.2008.02.029

Cited by 118 publications

(39 citation statements)

References 25 publications

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“…When it is doped, ZnO film presents promising second-order nonlinear optical properties, which achieve the giant nonlinear optical effects about 50 pm/V (Ebothe et al 2007). Many methods have been employed to prepare ZnO thin films like spray pyrolysis (Benny et al 1999), molecular beam epitaxy (Feng et al 2006), chemical vapor deposition (Funakubo et al 1999), RF magnetron sputtering (Lai and Lee 2008) and sol-gel (Hwangbo et al 2008). The latest method has the advantage to give a high surface morphology at lower crystallizing temperature.…”

Section: Introductionmentioning

confidence: 99%

Structural, optical and electrical properties of ZnO:Al thin films for optoelectronic applications

et al. 2013

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Undoped and aluminum-doped ZnO thin films are prepared by the sol-gel spincoating process. Zinc acetate dihydrate, ethanol and mono-ethanolamine are used as precursor, solvent and stabilizer, respectively. The atomic percentage of dopant in solution were [Al/Zn] = 1 %, 2 % and 3 %. The effect of Al doping on the optical and electrical properties of ZnO films was investigated by X-ray diffraction (XRD), Four-Point probe technique and UV-visible spectrophotometery. The results from the X-ray diffraction show that the pure ZnO thin films had a polycrystalline structure of the hexagonal Wurtzite Type. A minimum resistivity of 3.3 × 10 −3 · cm was obtained for the film doped with 2 mol % Al. Optical transmissions reveal a good transmittance within the visible wavelength spectrum region for all of the films. The value of the band gap is enhanced from 3.21 eV (undoped ZnO) to 3.273 eV (Al/Zn = 3 %), the increase in the band gap can be explained by the Burstein-Moss effect.

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Section: Introductionmentioning

confidence: 99%

Structural, optical and electrical properties of ZnO:Al thin films for optoelectronic applications

et al. 2013

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“…Besides, the intensity of UV emission at 390 nm for ZnO NRs is higher than that for ZnO film. For ZnO film, the absorption coefficient at 365 nm is about (10 4 -10 5 cm -1 ) [35]. Due to a larger surface-to-volume ratio of the ZnO NRs, more UV light will be absorbed and more excitons will appear under UV light illumination, which will lead to a higher UV near-band-edge emission.…”

Section: Resultsmentioning

confidence: 99%

Ultraviolet sensing based on nanostructured ZnO/Si surface acoustic wave devices

Guo

Zhao

Zhou

et al. 2015

Smart Mater. Struct.

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Ultraviolet (UV) sensor based on nanostructured ZnO/Si Surface Acoustic Wave (SAW) devices is studied in this paper. The ZnO films sputtered onto Si (100) substrate showed a preferred (0002) orientation and good photoluminescence emission. For the SAW device with a wavelength of 64 m, a frequency downshift of ~ 1.4 kHz was observed at the Rayleigh mode under a UV light intensity of 0.6 mW/cm 2 , whereas the frequency downshift for the Rayleigh mode was increased to 8.3 kHz after integrating ZnO nanorods (NRs) in the ZnO/Si SAW devices. For the SAW device with a wavelength of 20 m irradiated under a UV light intensity of 0.6 mW/cm 2 , a frequency downshift of 25 kHz for the Sezawa mode was obtained compared to a shift of 12 kHz for the Rayleigh mode. After depositing ZnO NRs, the resonant frequency for the Rayleigh mode was increased to 27.4 kHz under the same UV intensity illumination, due to the significant increase in surface-to-volume ratio.

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“…By extrapolating the linear part of the plot to (αh) 2 = 0 the value of the energy gap was found to be about 3.33 eV. who deposited ZnO thin film on PET plastic substrate and also by many other authors who prepared their ZnO thin films on glass and silicon (Gümüş et al, 2006;Khoury et al, 2010;Kang et al, 2007;Lai et al, 2008).…”

Section: The Optical Propertiesmentioning

confidence: 98%

ZnO Metal-Semiconductor-Metal UV Photodetectors on PPC Plastic with Various Metal Contacts

Jandow¹,

Hassan²,

Yam³

et al. 2012

Photodetectors

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Investigation of optical and electrical properties of ZnO thin films

Cited by 118 publications

References 25 publications

Structural, optical and electrical properties of ZnO:Al thin films for optoelectronic applications

Structural, optical and electrical properties of ZnO:Al thin films for optoelectronic applications

Ultraviolet sensing based on nanostructured ZnO/Si surface acoustic wave devices

ZnO Metal-Semiconductor-Metal UV Photodetectors on PPC Plastic with Various Metal Contacts

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