2009 European Conference on Radiation and Its Effects on Components and Systems 2009
DOI: 10.1109/radecs.2009.5994571
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Investigation of neutron and proton SEU cross-sections on SRAMs between a few MeV and 50 MeV

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Cited by 10 publications
(9 citation statements)
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“…As can be seen, the 96 and 293 MeV neutron values are 27% and 5% larger than the saturation value, respectively; and therefore within the considered statistical uncertainty. This is compatible with the fact that in virtue of their similar nuclear reaction cross section protons and neutrons are expected to yield equivalent SEE cross sections above roughly 50 MeV [18,19].…”
Section: Ptb: Neutrons Between 5 and 15 Mevsupporting
confidence: 79%
“…As can be seen, the 96 and 293 MeV neutron values are 27% and 5% larger than the saturation value, respectively; and therefore within the considered statistical uncertainty. This is compatible with the fact that in virtue of their similar nuclear reaction cross section protons and neutrons are expected to yield equivalent SEE cross sections above roughly 50 MeV [18,19].…”
Section: Ptb: Neutrons Between 5 and 15 Mevsupporting
confidence: 79%
“…The device simulations in Ref. 3 by D. Lambert also showed that this is true for the devices with 65, 90, 130 and 180 nm technology nodes. From Fig.…”
Section: Relative Cumulative Event Numbermentioning
confidence: 76%
“…Its height was set at 1 µm that is on the sensitive volume thickness scale. 3 Its radius was set at 10 µm that is much larger than the feature size of advanced nano-devices. In order to get the radial energy deposition distribution, the detector was divided into an innermost cylinder of radius 1 nm (much smaller than the feature size of advanced devices) and 43 concentric cylindrical shells of increasing thickness.…”
Section: Simulation Detailsmentioning
confidence: 99%
“…For this purpose, we use technological information about the SRAM transistor technology in order to define the surface sensitive to the charge collection as that corresponding to an individual SRAM cell (∼10 µm 2 ). As to what regards the thickness of the SV, we consider 0.5 µm in line with what has been published in studies on similar technologies [16]. As we will later quantify, the variations of this parameter within reasonable margins do not have a significant impact on the simulation outcome.…”
Section: Seu Model Calibration and Benchmarkmentioning
confidence: 94%