Investigation of Mo Doping Effects on the Properties of AlN-Based Piezoelectric Films Using a Sputtering Technique

Feng, Guang-Huan; Li, Chengying; Chen, Yueh-Han; Ho, Yi-Chen; Chu, Sheng−Yuan; Tsai, Cheng‐Che; Hong, Cheng‐Shong

doi:10.1149/2162-8777/aca796

Cited by 4 publications

(3 citation statements)

References 19 publications

(18 reference statements)

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“…), TM-N bonds become weak and move the TM atoms closer to the centers of the three nearby N atoms. It was found that the place of the TMs was strongly linked to their group number (Akiyama et al, 2009a;Akiyama et al, 2009b;Luo et al, 2009;Liu et al, 2013;Mayrhofer et al, 2015;Hu et al, 2018;Manna et al, 2018;Yanagitani and Jia, 2019;Fiedler et al, 2021;Feng et al, 2022;Lv et al, 2023a;Patidar et al, 2023;Zha et al, 2023). For Mo dopant, piezoelectric coefficient d 33 of AlN: Mo (3.46%) films reached to 7.33 pm/V (Zha et al, 2023).…”

Section: Aln Piezoelectric Filmsmentioning

confidence: 99%

Recent progress in piezoelectric thin films as self-powered devices: material and application

Song,

Hou,

Jiang

2024

Front. Mater.

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Piezoelectric materials have become a key component in sensors and actuators in many industrial fields, such as energy harvesting devices, self-powered structures, biomedical devices, nondestructive testing, owing to the novel properties including high piezoelectric coefficient and electromechanical coupling factors. Piezoelectric thin films integrated on silicon substrates are widely investigated for their high performance and low manufacturing costs to meet the requirement of sensor networks in internet of things (IoT). The aim of this work is to clarify the application and design structure of various piezoelectric thin films types, synthesis methods, and device processes. Based on latest literature, the process of fabricating thin film sensors is outlined, followed by a concise overview of techniques used in microelectromechanical systems (MEMS) processing that can integrate more complex functions to obtain relevant information in surrounding environment. Additionally, by addressing piezoelectric thin films sensors as a cutting-edge technology with the ability to produce self-powered electronic devices, this work delivers incisive conclusions on all aspects of piezoelectric sensor related features. A greater understanding of piezoelectricity is necessary regarding the future development and industry challenges.

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Section: Aln Piezoelectric Filmsmentioning

confidence: 99%

Recent progress in piezoelectric thin films as self-powered devices: material and application

Song,

Hou,

Jiang

2024

Front. Mater.

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“…The increased slope of d 33 was larger than that in Sc x Al 1-x N, but the enhancement of d 33 in Cr x Al 1-x N only appeared at low x. Similar to the behavior in Cr, the d 33 increased in Mo x Al 1-x N with x up to 0.0346 [117]. Other TMs such as Ti [118,119], Mg [120], Ta [121,122] and V [121], were also investigated.…”

Section: Aln and Its Alloysmentioning

confidence: 81%

Surface and bulk acoustic wave resonators based on aluminum nitride for bandpass filters

Zha,

Luo,

Tao

et al. 2024

AAPPS Bull.

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Bandpass filters with high frequency and wide bandwidth are indispensable parts of the fifth-generation telecommunication technologies, and currently, they are mainly based on surface and bulk acoustic wave resonators. Owing to its high mechanical strength, excellent stability at elevated temperatures, good thermal conductivity, and compatibility with complementary metal-oxide-semiconductor technology, aluminum nitride (AlN) becomes the primary piezoelectric material for high-frequency resonators. This review briefly introduces the structures and key performance parameters of the acoustic resonators. The common filter topologies are also discussed. In particular, research progresses in the piezoelectric AlN layer, electrodes, and substrates of the resonators are elaborated. Increasing the electromechanical coupling constant is the main concern for the AlN film. To synthesize AlN in single-crystalline or poly-crystalline with a high intensity of (0002) orientation, and alloy the AlN with other elements are two effective approaches. For the substrates and bottom electrodes, lattice and thermal expansion mismatch, and surface roughness are critical for the synthesis of a high-crystal-quality piezoelectric layer. The electrodes with low electrical resistance, large acoustic-impedance mismatch to the piezoelectric layer, and low density are ideal to reduce insertion loss. Based on the research progress, several possible research directions in the AlN-based filters are suggested at the end of the paper.

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“…AlN is a piezoelectric material that is used in a wide range of applications within the MEMS field, because of its great mechanical properties, enough chemical resistance to microfabrication processes, conventional deposition methods, and acceptable electromechanical coupling factor (k 2 ef f ) [3,4]. The main linear applications where AlN is used as piezoelectric material are resonators [5,6], tunable devices [7], several types of sensors [8], actuators [9], wearable devices [10], and generally where the layers at the microscale with piezoelectric effect are needed [11]. In all of those applications, the main characteristics offered by piezoelectric materials are low power consumption (around 10 µW), easy design techniques, CMOS compatibility, high operation frequencies, and high quality factor for frequency applications.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear effects and applications of AlN: A comprehensive physical formulation approach

Jaramillo Alvarado,

Torres Jacome,

Rosales

et al. 2024

Rev. Mex. Fís.

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Piezoelectric materials have nonlinear effects that can be used in 5G and IoT technologies. However, since most nonlinear problems in this area do not have analytic solutions, FEM simulations are an essential design tool. In this study, we have developed a stress-charge formulation for non-linear piezoelectric materials compatible with commonly used simulation tools in industry and research. FEM simulation results for AlN with three nonlinear phenomena are presented: variation of effective electrical permittivity, shift of the effective elasticity constants, and enhancement of electromechanical coupling factor. These simulations were conducted with the same material parameters, having great agreement with recent and important experimental results. The simulations allow us to deduce the values of the components of the high-order tensors for the first time as qr_331 = qr_333 = −1600 and g_333 = −80N/V m. The maximum percent errors obtained for the simulations of theeffective electrical permittivity and effective elasticity constants were 0.1% and 1.77%, respectively.

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Investigation of Mo Doping Effects on the Properties of AlN-Based Piezoelectric Films Using a Sputtering Technique

Cited by 4 publications

References 19 publications

Recent progress in piezoelectric thin films as self-powered devices: material and application

Recent progress in piezoelectric thin films as self-powered devices: material and application

Surface and bulk acoustic wave resonators based on aluminum nitride for bandpass filters

Nonlinear effects and applications of AlN: A comprehensive physical formulation approach

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