Investigation of micropipe and defects in molten KOH etching of 6H n-silicon carbide (SiC) single crystal

Mahajan, Shivani; Rokade, M. V.; Ali, Shahid; Rao, K. Srinivasa; Munirathnam, N. R.; Prakash, T. L.; Amalnerkar, Dinesh

doi:10.1016/j.matlet.2013.03.079

Cited by 14 publications

(11 citation statements)

References 24 publications

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“…The patterns formed after KOH etching depend on experimental conditions such as etching duration and temperature of the etchant. When molten KOH at about 500℃ is added to SiC sample, it exhibits selective etching of SiC sample between areas with defects and those without defects in about 5 min [ 45 ]. After cooling and removing KOH from SiC sample, there are a lot of etched pits with different topography which are related to different types of defects.…”

Section: Inspection Techniquesmentioning

confidence: 99%

“…4 b, the dislocations produce large hexagonal etched pits assigned to micropipes, medium-sized pits to TSDs, and small-sized pits to TEDs. [ 45 ]…”

Section: Inspection Techniquesmentioning

confidence: 99%

“…4b, the dislocations produce large hexagonal etched pits assigned to micropipes, medium-sized pits to TSDs, and small-sized pits to TEDs. [45] The advantage of KOH etching is that it can inspect all defects under the surface of SiC sample at one time, preparation of SiC sample is easy, and the cost is low. However, KOH etching is an irreversible process that can cause permanent damage to the sample.…”

Section: Koh Etchingmentioning

confidence: 99%

“…a TEM and HAADF image of SF [43]. bOptical micrograph image after KOH etching [45]. c PL spectrum with and without SF while the inset shows the monochromatic micro-PL mapping at a wavelength of 480 nm.…”

Section: Scanning Electron Microscopy (Sem)mentioning

confidence: 99%

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Defect Inspection Techniques in SiC

et al. 2022

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With the increasing demand of silicon carbide (SiC) power devices that outperform the silicon-based devices, high cost and low yield of SiC manufacturing process are the most urgent issues yet to be solved. It has been shown that the performance of SiC devices is largely influenced by the presence of so-called killer defects, formed during the process of crystal growth. In parallel to the improvement of the growth techniques for reducing defect density, a post-growth inspection technique capable of identifying and locating defects has become a crucial necessity of the manufacturing process. In this review article, we provide an outlook on SiC defect inspection technologies and the impact of defects on SiC devices. This review also discusses the potential solutions to improve the existing inspection technologies and approaches to reduce the defect density, which are beneficial to mass production of high-quality SiC devices.

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Section: Inspection Techniquesmentioning

confidence: 99%

“…4 b, the dislocations produce large hexagonal etched pits assigned to micropipes, medium-sized pits to TSDs, and small-sized pits to TEDs. [ 45 ]…”

Section: Inspection Techniquesmentioning

confidence: 99%

Section: Koh Etchingmentioning

confidence: 99%

Section: Scanning Electron Microscopy (Sem)mentioning

confidence: 99%

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Defect Inspection Techniques in SiC

et al. 2022

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“…This method is only suitable for n-type SiC substrates with an off-angle of 0° to 8°. Sandeep Mahajan et al utilized molten KOH to etch 6H n-type SiC single-crystal wafers [ 30 ]. Their results revealed that 500 °C was the optimum temperature for the identification of micropipes (MPs), threading screw dislocations (TSDs), threading edge dislocations (TEDs) and basal plane dislocations (BPDs).…”

Section: Introductionmentioning

confidence: 99%

Micropipes in SiC Single Crystal Observed by Molten KOH Etching

Wang

et al. 2021

Materials

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Micropipe, a “killer” defect in SiC crystals, severely hampers the outstanding performance of SiC-based devices. In this paper, the etching behavior of micropipes in 4H-SiC and 6H-SiC wafers was studied using the molten KOH etching method. The spectra of 4H-SiC and 6H-SiC crystals containing micropipes were examined using Raman scattering. A new Raman peak accompanying micropipes located near −784 cm−1 was observed, which may have been induced by polymorphic transformation during the etching process in the area of micropipe etch pits. This feature may provide a new way to distinguish micropipes from other defects. In addition, the preferable etching conditions for distinguishing micropipes from threading screw dislocations (TSDs) was determined using laser confocal microscopy, scanning electron microscopy (SEM) and optical microscopy. Meanwhile, the micropipe etching pits were classified into two types based on their morphology and formation mechanism.

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Relationship Between Nanotubes and Breakdown Voltage in GaN p–i–n Diodes

Yang

Zhao

Yang

et al. 2022

Physica Status Solidi (a)

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The failure analysis of a GaN p–i–n diode is carried out by current–voltage (I–V) tests, emission microscope (EMMI), focused ion beam (FIB), and scanning electron microscope (SEM). A nanotube is found at the location of the luminous spot in the EMMI test. Intentional breakdown experiments show that the breakdown voltages of about 1/3 diodes with the size of are lower than 50 V. These proportions are 1/2 and 5/6 for the diodes with the size of and respectively. At the breakdown injuries of some diodes, the nanotubes are also discovered, which indicates that nanotubes should be one of the important reasons for the reduction of the breakdown threshold voltage.

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Investigation of micropipe and defects in molten KOH etching of 6H n-silicon carbide (SiC) single crystal

Cited by 14 publications

References 24 publications

Defect Inspection Techniques in SiC

Defect Inspection Techniques in SiC

Micropipes in SiC Single Crystal Observed by Molten KOH Etching

Relationship Between Nanotubes and Breakdown Voltage in GaN p–i–n Diodes

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