“…40.Rw, 85.30.Kk, 85. 30.Mn Calculations 1,2,3 indicate that tunnel conductance of layered barriers, in particular those with "crested" potential profile peaking in the middle, may be much more sensitive to the applied voltage than that of the uniform layers. 4 This sensitivity, if combined with high endurance to electric stress, may be used in advanced floatinggate memories, including fast and scalable random access memories 5 and fast single-and few-electron memories, 6,7 and ultradense data storage systems, 1 as well as for improvement of the usual nonvolatile (e.g., "flash") memories.…”