Investigation of linear and nonlinear optical properties of GaSxSe1–xcrystals

Allakhverdiev, K. R.; Гулиев, Р Я; Salaev, É. Yu.; Смирнов, В. В.

doi:10.1070/qe1982v012n07abeh005710

Cited by 37 publications

(27 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Doping is a well known technique to modify various physical properties of the crystals: transparency range; nonlinear and linear optical and mechanical properties; thermal conductivity, etc. GaSe doping with S [3,4], In [5][6][7] and Er [8][9][10] are mostly studied. Among these dopants the sulfur is likely to show best results for the compositions GaSe 1-x S x , x≤0.4 [3].…”

Section: Introductionmentioning

confidence: 99%

Growth of GaSe and GaS single crystals

Кох¹,

Andreev²,

Svetlichnyi³

et al. 2011

Cryst. Res. Technol.

View full text Add to dashboard Cite

Key words synthesis of chalcogenides, Bridgman technique, nonlinear optic materials.The paper describes principal manipulations to prepare single crystals of GaSe and GaS. A new simple method of synthesis with single-zone heating furnace is proposed. Growth of crystals was performed by modified Bridgman method with the use of rotating heat field. Raman and optical depth spectra show high structural and optical quality of obtained crystals.

show abstract

Section: Introductionmentioning

confidence: 99%

Growth of GaSe and GaS single crystals

Кох¹,

Andreev²,

Svetlichnyi³

et al. 2011

Cryst. Res. Technol.

View full text Add to dashboard Cite

show abstract

“…The second-order nonlinear susceptibility coefficient for GaSe heavily (10 mass %) doped with light S or for solid solution GaSe 0.6 S 0.4 crystal grown by conventional technology is only 0.31 of that for GaSe 24 . As large an increase in the efficient second-order nonlinear susceptibility coefficient for GaSe as from 37 to 51 pm V 21 is observed for GaSe doped with heavier In due to improved optical quality 19 .…”

Section: Frequency Conversion: Optimal Dopingmentioning

confidence: 99%

“…The original e-polytype structure of GaSe is strengthened by doping; meanwhile, the physical properties responsible for the efficiency of frequency conversion and the possibility of electro-optic applications may be noticeably modified. However, due to the negative effect on optical nonlinearity of doping by sulfur, the first agent explored 24 , only a few other dopants (In, Te, Er, and Ag), in limited concentration ranges, were used until the last decade to modify further physical properties for nonlinear optical applications 19,21,25,26 . In addition, these studies are mostly related to the physical properties of the ordinary light waves.…”

Section: Introductionmentioning

confidence: 99%

Doped GaSe crystals for laser frequency conversion

Guo

Xie

et al. 2015

Light Sci Appl

View full text Add to dashboard Cite

In this review, we introduce the current state of the art of the growth technology of pure, lightly doped, and heavily doped (solid solution) nonlinear gallium selenide (GaSe) crystals that are able to generate broadband emission from the near infrared (IR) (0.8 mm) through the mid-and far-IR (terahertz (THz)) ranges and further into the millimeter wave (5.64 mm) range. For the first time, we show that appropriate doping is an efficient method controlling a range of the physical properties of GaSe crystals that are responsible for frequency conversion efficiency and exploitation parameters. After appropriate doping, uniform crystals grown by a modified technology with heat field rotation possess up to 3 times lower absorption coefficient in the main transparency window and THz range. Moreover, doping provides the following benefits: raises by up to 5 times the optical damage threshold; almost eliminates two-photon absorption; allows for dispersion control in the THz range independent of the mid-IR dispersion; and enables crystal processing in arbitrary directions due to the strengthened lattice. Finally, doped GaSe demonstrated better usefulness for processing compared with GaSe grown by the conventional technology and up to 15 times higher frequency conversion efficiency. INTRODUCTIONThe e-polytype of gallium selenide (hereinafter GaSe) has been known since 1934 1 and promises efficient optical frequency conversion and detection over a large range of wavelengths. The performance potential of GaSe, which belongs to the point group symmetry 6m2, can be attributed to its extreme physical properties. GaSe has a broadband transparency window over the range of 0.62-20 mm for non-polarized light continues at wavelengths o50 mm 2,3 . Other attractive physical properties of GaSe are its prodigious birefringence B 5 0.375 at l 5 10.6 mm and 0.79 at terahertz (THz) range 4 , and very high second-order nonlinear susceptibility d 22 5 54 pm V 21 at 10 mm 5 and 24.3 pm/V in the THz band 6 . Among the mid-infrared (IR) anisotropic nonlinear crystals, GaSe has the second highest optical damage threshold 7,8 and thermal conductivity in the plane of the (0001) A GaSe crystal was first used for laser frequency conversion in the mid-IR in 1972 9,10 . In subsequent years, GaSe was widely used for inlab mid-IR applications 5 . Over the past two decades, GaSe has been among the most promising nonlinear optical crystals for efficient generation of ultrabroadband radiation 0.8-5640 mm (with the

show abstract

“…Therefore the dispersion properties have been determined only for the ε polytype of GaSe [22] and the β polytype of GaS [23]. From known data, it follows that GaS crystals, existing in pure form as the β polytype, match the structure of ε-GaSe and are transformed to the ε polytype which is possible for them, incorporated into the solid solution ε-GaSe 1-x S x , x ≤ 0.4.…”

mentioning

confidence: 99%

Dispersion properties of GaSe1-x S x in the terahertz range

Zhang

Guo

et al. 2011

J Appl Spectrosc

View full text Add to dashboard Cite

We grew nonlinear crystals of the solid solutions GaSe 1-x S x (x ≤ 0.4) by the vertical Bridgman method. The increase in hardness from 8 kg/mm 2 for x = 0 to ~20 kg/mm 2 for x = 0.4 as a result of the presence of sulfur in the GaSe crystals allowed us to use a special technology to make working samples with position of the optic axis in the plane of the entrance surfaces, and for the first time to make direct measurements of the dispersion properties n e (λ) for the extraordinary wave and n o (λ) for the ordinary wave in the terahertz range of the spectrum by pulsed terahertz spectroscopy. We show that it is possible to realize an unconventional ee-e type of interaction in generation of terahertz radiation.Introduction. The unique set of physical properties in nonlinear GaSe crystals, responsible for the efficiency of parametric frequency conversion processes for converting radiation in the near IR and mid-IR ranges to the terahertz range of the spectrum [1, 2], has attracted steady attention from many researchers and developers. Unfortunately, the extremely poor mechanical properties (almost zero hardness on the Mohs scale and easy cleavage) limit use of these layered crystals of symmetry point group 6 _ 2m to intralaboratory applications. Recently, with the aim of expanding nonlinear optics applications, the mechanical properties of GaSe crystals have been significantly improved as a result of doping with Group III and Group IV elements of Mendeleev's Periodic Table (Al [3], S [4], In [5-7], Te [8,9], Er [10]) and growing the corresponding crystals of the solid solutions, and also by growing crystals from GaSe:AgGaSe 2 [6] and GaSe:AgGaS 2 [11] melts. In contrast to GaSe crystals, AgGaSe 2 and AgGaS 2 crystals have symmetry point group 4 _ 2m. It has been established that besides the mechanical properties, other key physical properties of GaSe crystals can be controllably modified by selection of the sulfur content. Introducing large concentrations of sulfur, indium, and tellurium (leading to a change in the lattice parameters) have the best possibilities in this regard; in other words, growing nonlinear crystals of solid solutions according to the chemical formulas GaSe:GaS → GaSe 1-x S x [4], [12][13][14][15][16][17][18][19], GaSe:InSe → Ga 1-x In x Se [5,7], and GaSe:GaTe → GaSe 1-x Te x [8,9]. Introducing small sulfur ions eliminates cleavage defects in the GaSe crystals and reduces linear optical losses in the region of maximum transparency (optimal doping level, 2-3 wt.%), and also increases the thermal conductivity severalfold orthogonal to the growth layers, as a result of substitution of selenium ions, filling vacancies, and intercalation in the interlayer space. As a result of these changes, the radiation resistance relative to nanosecond pump pulses increases by 20%-30%. The increase in the mixing ratio to x ≤ 0.4 shifts the short-wavelength edge of the transmission spec-

show abstract

Investigation of linear and nonlinear optical properties of GaS_xSe_1–xcrystals

Cited by 37 publications

References 1 publication

Growth of GaSe and GaS single crystals

Growth of GaSe and GaS single crystals

Doped GaSe crystals for laser frequency conversion

Dispersion properties of GaSe1-x S x in the terahertz range

Contact Info

Product

Resources

About