Investigation of inhomogeneous barrier height for Au/n-type 6H-SiC Schottky diodes in a wide temperature range

Güzel, Tamer; Bilgili, Ahmet Kürşat; Özer, Metin

doi:10.1016/j.spmi.2018.10.004

Cited by 27 publications

(7 citation statements)

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“…After Sn doping, the n value of p-Si/n-ITO is increased by around three times and is calculated to be 8.984 and 6.468 for dark and light conditions, respectively. The values of the present work are better than this result [38]. These results suggest that the Cu/Sn-LaPO4/n-Si SBD is favourable for applications in optoelectronic devices.…”

Section: Evaluation Of Cu/sn-lapo4/n-si Mis Structured Diodecontrasting

confidence: 46%

Heterojunction structure for high electrical performance of Cu/Sn-LaPO 4 /n-Si type Schottky barrier diode

Mariappan

Priya

Bakkiyaraj

et al. 2023

Preprint

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The Cu/Sn-LaPO4/n-Si MIS Schottky barrier diode (SBD) with a 10% Sn doping has been successfully fabricated, and their photodiode properties were investigated. The I-V forward and reverse bias curves determine the photodiode parameters such as barrier height, ideality factor, and saturation currents from the thermionic emission theory. The results of the experiments with 10% Sn-LaPO4 SBDs showed a linear decrease in the ideality factor (n) up to 2.31 and 1.74, respectively, with a small increase in the effective barrier height (𝛟B) of 0.744 and 0.806 eV in dark and light conditions these results signify their use in optoelectronic industries.

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Section: Evaluation Of Cu/sn-lapo4/n-si Mis Structured Diodecontrasting

confidence: 46%

Heterojunction structure for high electrical performance of Cu/Sn-LaPO 4 /n-Si type Schottky barrier diode

Mariappan

Priya

Bakkiyaraj

et al. 2023

Preprint

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“…This behavior may be attributed to the absence of free carriers at low temperatures (Chand & Kumar, 1996). It were reported that the resistances of metal/ semiconductor Schottky diodes fabricated with 6H-SiC semiconductor in the traditional sense are in the range of 60-100 Ω at room temperature (Asubay, Genisel, & Ocak, 2014;Çınar, Coşkun, Aydoğan, Asıl, & Gür, 2010;Güzel et al, 2018;Zhang, Madangarli, Tarplee, & Sudarshan, 2001). However, in this study, the resistance of the polymer interface diode at room temperature was calculated as 10.08 kΩ.…”

Section: = +mentioning

confidence: 60%

“…According to Figure 3B, there is a close linear relationship between the ideality factor of the effective barrier height calculated from experimental parameters depending on the temperature. This is related to the lateral inhomogeneity of the barrier height (Güzel, Bilgili, & Özer, 2018;Leroy, Opsomer, Forment, & Van Meirhaeghe, 2005). From the plot, lateral homogeneous barrier height for n = 1 value was calculated as 1.11 eV for 6H-SiC/MEH-PPV polymer interface diode.…”

Section: T(k) Lni-v H(i)-i Dv-d(lni) F(v)-v Nmentioning

confidence: 99%

Electrical Characterization of 6H-SiC/MEH-PPV/Al Schottky Diode by Current-Voltage Method in A Wide Temperature Range

Güzel

2021

Erzincan Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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In this paper, the 6H-SiC/MEH-PPV/Al Schottky diode with polymer interface was fabricated and characterized using current-voltage data in the temperature range 80-400 K. Important parameters of the fabricated diode such as ideality factor, barrier height was calculated from current-voltage measurements. The saturation current also was determined from the plots obtained from experimental results. In addition, the series resistance of the diode was calculated by using Cheung and Norde methods. On the other hand, the calculated diode characteristics were discussed by comparing with the each other and literature. Strong dependence of the calculated characteristics on temperature has been determined.

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“…Current-voltage and capacity-voltage measurements have a very important place in determining these experimentally. [12][13][14] Capacity-voltage measurements are one of the basic techniques of admittance spectroscopy. With this technique, the semiconductor plays a vital role in calculating the barrier height from the electronic parameters, the resistance, and the density of the trap levels at the interface, as well as determining the interface state density, which is of great importance in current conduction.…”

Section: Introductionmentioning

confidence: 99%

An Experimental Study on Artificial Intelligence‐Based Prediction of Capacitance–Voltage Parameters of Polymer‐Interface 6H‐SiC/MEH‐PPV/Al Schottky Diodes

Güzel

Çolak

2022

Physica Status Solidi (a)

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Herein, an artificial neural network (ANN) model has been developed to predict the capacitance values of the polymer‐interface 6H‐SiC/MEH‐PPV/Al Schottky diode depending on the frequency. In the training of the feed‐forward back‐propagation network model with five neurons in its hidden layer, 480 experimental data have been used. Of these, 70% of the data used in the development of the multilayer perceptron network has been used for network training, 15% for validation, and 15% for the test phase. The predictive performance of the network model has been analyzed by comparing the predicted values obtained from the ANN with the experimental data. For the developed ANN, the mean square error value is 4.34E‐06, the R‐value is 0.99728, and the average margin of deviation value is 0.03%.

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Investigation of inhomogeneous barrier height for Au/n-type 6H-SiC Schottky diodes in a wide temperature range

Cited by 27 publications

References 50 publications

Heterojunction structure for high electrical performance of Cu/Sn-LaPO 4 /n-Si type Schottky barrier diode

Heterojunction structure for high electrical performance of Cu/Sn-LaPO 4 /n-Si type Schottky barrier diode

Electrical Characterization of 6H-SiC/MEH-PPV/Al Schottky Diode by Current-Voltage Method in A Wide Temperature Range

An Experimental Study on Artificial Intelligence‐Based Prediction of Capacitance–Voltage Parameters of Polymer‐Interface 6H‐SiC/MEH‐PPV/Al Schottky Diodes

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