Investigation of high-k/metal gate MOS capacitors annealed by microwave annealing as a post-metal annealing process

Su, Yean-Liang; Kuo, Tai-Chen; Lee, Wen−Hsi; Lee, Yao-Ren

doi:10.1109/nano.2016.7751519

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) 2016

DOI: 10.1109/nano.2016.7751519

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Investigation of high-k/metal gate MOS capacitors annealed by microwave annealing as a post-metal annealing process

Yean-Liang Su

Tai-Chen Kuo

Wen−Hsi Lee

et al.

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“…The improvement of BTI reliability by thermal treatments for MOS-capacitors with HKMG has been reported in previous publications. 7 Nevertheless, to the best knowledge of us, a systematic investigation of the impact of PDA and PCA on the xBTI reliability in FinFETs has not been performed and this raises the motivation of present work.…”

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confidence: 99%

Impact of Post High-κ Deposition Anneal (PDA) and Post High-κ Capping Anneal (PCA) on the xBTI Performance in HfO₂-Based FinFETs

Wang

Luo

Jiang

et al. 2019

ECS J. Solid State Sci. Technol.

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This paper mainly deals with the impact of high-κ/metal gate (HKMG) module on the xBTI performance in 16/14 nm FinFETs. Both Post high-κ Deposition Anneal (PDA) and Post high-κ Capping Anneal (PCA) are utilized to improve the reliability of HfO 2based FinFETs. The intrinsic correlation between annealing temperature and reliability improvement is systematically investigated. Achieved results show that for p-type FinFETs, both PDA and PCA can improve the Negative Bias Temperature Instability (NBTI) performance, due to the restoration of Si/interfacial layer (IL) interface trap states and IL regrowth. Moreover, NBTI performance is more sensitive to the variation of PDA temperature than PCA temperature. For n-type FinFETs, PDA instead of PCA can improve the Positive Bias Temperature Instability (PBTI) performance, because of oxygen vacancies passivation in the high-κ dielectric bulk and the IL regrowth. Especially, as the increase of PDA temperature, the improvement of PBTI is strengthened.

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mentioning

confidence: 99%

Impact of Post High-κ Deposition Anneal (PDA) and Post High-κ Capping Anneal (PCA) on the xBTI Performance in HfO₂-Based FinFETs

Wang

Luo

Jiang

et al. 2019

ECS J. Solid State Sci. Technol.

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Leakage Current Behavior in HfO₂/SiO₂/Al₂O₃ Stacked Dielectric on 4H-SiC Substrate

Huang

Wang

Chen

et al. 2023

IEEE J. Electron Devices Soc.

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Investigation of high-k/metal gate MOS capacitors annealed by microwave annealing as a post-metal annealing process

Cited by 2 publications

References 2 publications

Impact of Post High-κ Deposition Anneal (PDA) and Post High-κ Capping Anneal (PCA) on the xBTI Performance in HfO₂-Based FinFETs

Impact of Post High-κ Deposition Anneal (PDA) and Post High-κ Capping Anneal (PCA) on the xBTI Performance in HfO₂-Based FinFETs

Leakage Current Behavior in HfO₂/SiO₂/Al₂O₃ Stacked Dielectric on 4H-SiC Substrate

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Investigation of high-k/metal gate MOS capacitors annealed by microwave annealing as a post-metal annealing process

Cited by 2 publications

References 2 publications

Impact of Post High-κ Deposition Anneal (PDA) and Post High-κ Capping Anneal (PCA) on the xBTI Performance in HfO2-Based FinFETs

Impact of Post High-κ Deposition Anneal (PDA) and Post High-κ Capping Anneal (PCA) on the xBTI Performance in HfO2-Based FinFETs

Leakage Current Behavior in HfO2/SiO2/Al2O3 Stacked Dielectric on 4H-SiC Substrate

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Product

Resources

About

Impact of Post High-κ Deposition Anneal (PDA) and Post High-κ Capping Anneal (PCA) on the xBTI Performance in HfO₂-Based FinFETs

Impact of Post High-κ Deposition Anneal (PDA) and Post High-κ Capping Anneal (PCA) on the xBTI Performance in HfO₂-Based FinFETs

Leakage Current Behavior in HfO₂/SiO₂/Al₂O₃ Stacked Dielectric on 4H-SiC Substrate