Investigation of heterostructure “ferromagnetic semiconductor-semiconductor” in the millimeter and submillimeter microwave range

Осипов, В. В.; Viglin, N. A.; Samokhvalov, A. A.

doi:10.1016/s0375-9601(98)00629-x

Cited by 26 publications

(22 citation statements)

References 5 publications

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“…Early studies (Osipov et al, 1990(Osipov et al, , 1998Viglin et al, 1991Viglin et al, , 1997, which have since largely been ignored, used a Cr-and Eu-based chalcogenide ferromagnetic semiconductor (FSm) (Nagaev, 1983) as the spin injector. 64 The experiments were motivated by the theoretical 63 For example, the measured resistance of clean F/N contacts in CPP giant magnetoresistance (Bussmann et al, 1998) was used to infer that there is also a large contact resistance in all-metal spin injection experiments (Johnson, 2002b).…”

Section: All-semiconductor Spin Injectionmentioning

confidence: 99%

“…64 The experiments were motivated by the theoretical 63 For example, the measured resistance of clean F/N contacts in CPP giant magnetoresistance (Bussmann et al, 1998) was used to infer that there is also a large contact resistance in all-metal spin injection experiments (Johnson, 2002b). 64 These materials, while more difficult to fabricate than the subsequent class of III-V ferromagnetic semiconductors, have the desirable properties of providing injection of spinpolarized electrons (with spin lifetimes typically much longer than for holes) and large spin splitting ͓ϳ0.5 eV at 4.2 K for n-doped HgCr 2 Se 4 (Nagaev, 1983)] with nearly complete spin polarization and a Curie temperature T C of up to 130 K (HgCr 2 Se 4 ) (Osipov et al, 1998). work of Aronov (1976a;Aronov and Pikus, 1976) predicting that the electron spin resonance signal, proportional to the steady-state magnetization, would be changed by spin injection.…”

Section: All-semiconductor Spin Injectionmentioning

confidence: 99%

“…The choice of InSb is very suitable, due to its large negative (ϳϪ50) g factor (McCombe and Wagner, 1971), for detecting the effects of spin injection through electron spin resonance. The observed absorption and emission of microwave power (Osipov et al, 1998) was tuned by an applied magnetic field (from 35 GHz at Ϸ400 G up to 1.4 THz at 20 kG) and only seen when electrons flowed from FSm into an Sm region. The injection to the lower Zeeman level increased the absorption of electron spin resonance, while injection to the higher Zeeman level, leading to population inversion, generated microwave emission.…”

Section: All-semiconductor Spin Injectionmentioning

confidence: 99%

“…As discussed in Sec. II.D.3, p-n heterostructures have combined Cr-or Eu-based ferromagnetic semiconductors and InSb (Viglin et al, 1997;Osipov et al, 1998). Spin light-emitting diodes (recall Figs.…”

Section: Spin Diodesmentioning

confidence: 99%

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Spintronics: Fundamentals and applications

2004

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Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics. CONTENTS

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Section: All-semiconductor Spin Injectionmentioning

confidence: 99%

Section: All-semiconductor Spin Injectionmentioning

confidence: 99%

Section: All-semiconductor Spin Injectionmentioning

confidence: 99%

Section: Spin Diodesmentioning

confidence: 99%

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Spintronics: Fundamentals and applications

2004

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“…5, 22 We consider here generic parabolic n-type ferromagnetic QWs, though one expects to observe similar effects in coupled p-type ferromagnetic QWs. Several suitable n-type ferromagnetic semiconductors have been reported: 1 HgCr 2 Se 4 , 23 CdCr 2 Se 4 , 24 CdMnGeP 2 , 25 or most promising ZnO and GaMnN; 22,27 the latter two are believed to exhibit room temperature ͑RT͒ ferromagnetism. To be specific we perform our numerical simulations for GaMnNbased structures.…”

mentioning

confidence: 99%

Resonant tunneling magnetoresistance in coupled quantum wells

Ertler

Fabian

2006

Applied Physics Letters

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A three barrier resonant tunneling structure in which the two quantum wells are formed by a magnetic semiconductor is theoretically investigated. Self-consistent numerical simulations of the structure predict giant magnetocurrent in the resonant bias regime as well as significant current spin polarization for a considerable range of applied biases. The requirements for large magnetocurrent are spin resolved resonance levels as well as asymmetry ͑spatial or magnetic͒ of the coupled quantum wells. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2402878͔Semiconductor spintronics offers additional functionalities to the existing electronics technology by combining charge and spin properties of the current carriers. 1 Spin dependent resonant tunneling in double barrier heterostructures has been investigated both experimentally and theoretically with a magnetic quantum well ͑QW͒ made of semimetallic ErAs ͑Refs. 2 and 3͒ or dilute magnetic semiconductors ͑DMSs͒ such as GaMnAs ͑Refs. 4-9͒ or ZnMnSe ͑Refs. 10 and 11͒. Such diodes have been used as spin filters or spin detectors and effective injection of spin-polarized electrons into semiconductors has been demonstrated by employing interband tunneling devices based on GaMnSb. 12,13 A theoretical investigation of resonant tunneling through a nonmagnetic double barrier structure, e.g., AlAs/ GaAs/ AlAs, sandwiched between two bulk ferromagnetic DMSs, e.g., GaMnAs, shows a tremendous enhancement of the tunneling magnetoresistance ͑TMR͒ for low voltages if the thickness of the QW is properly tuned. 14 The effect has been demonstrated to be as high as 10 000% for generic parabolic bands and when including a more realistic kp band structure model still very high TMRs of about 800% have been obtained. 14 Such structures have already been grown and studied experimentally. 4,15,16 Here we propose to use magnetic resonant tunneling diodes ͑RTDs͒ comprising coupled magnetic QWs and three nonmagnetic barriers, as spintronic devices offering large magnetocurrents ͑MCs͒. Corresponding nonmagnetic three barrier structures have been experimentally studied, [17][18][19][20] while electric field domain formation in magnetic multiple QWs was theoretically investigated in Ref. 21. The magnetic three barrier structure allows to establish parallel ͑P͒ and antiparallel ͑AP͒ magnetization configurations and to observe MC. The QWs are assumed to be made of ferromagnetic semiconductors. 5,22 We consider here generic parabolic n-type ferromagnetic QWs, though one expects to observe similar effects in coupled p-type ferromagnetic QWs. Several suitable n-type ferromagnetic semiconductors have been reported: 1 HgCr 2 Se 4 , 23 CdCr 2 Se 4 , 24 CdMnGeP 2 , 25 or most promising ZnO and GaMnN; 22,27 the latter two are believed to exhibit room temperature ͑RT͒ ferromagnetism. To be specific we perform our numerical simulations for GaMnNbased structures.However, it is still controversial if the reported RT ferromagnetism in transition metal doped GaN and ZnO is due to non-resolved precipitates or n...

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Spin Injection–Extraction Processes in Metallic and Semiconductor Heterostructures

Bratkovsky¹

2010

Nanotechnology

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Spintronics is a discipline focusing on phenomena and devices essentially dependent on spin transport. We review recent theoretical and experimental advances in achieving large spin injection efficiency (polarization of current) and accumulated spin polarization. These include tunnel and giant magnetoresistance, (pseudo)spin‐torque and spin–orbit effects on electron transport in various heterostructures. We give a microscopic description of spin tunneling through oxide and modified Schottky barriers between a ferromagnet (FM) and a semiconductor (S). It is shown that in such FM–S junctions electrons with a certain spin projection can be efficiently injected into (or extracted from) S, while electrons with the opposite spin can accumulate in S near the interface. The derived criterion for efficient injection suggests that the barrier should be rather transparent (this is opposite to a criterion in the literature suggesting that it should be opaque). In degenerate semiconductors, extraction of spin can proceed at low temperatures. We mention a few novel spin‐valve ultrafast devices with small dissipated power: a magnetic sensor, a spin transistor, an amplifier, a frequency multiplier, a square‐law detector and a source of polarized radiation. We also discuss effects related to spin–orbital interactions, such as the spin Hall effect (SHE) and a recently predicted positive magnetoresistance accompanying SHE. Some esoteric devices such as ‘spinFET’, interacting spin logic and spin‐based quantum computing are discussed and problems with their realization are highlighted.

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Investigation of heterostructure “ferromagnetic semiconductor-semiconductor” in the millimeter and submillimeter microwave range

Cited by 26 publications

References 5 publications

Spintronics: Fundamentals and applications

Spintronics: Fundamentals and applications

Resonant tunneling magnetoresistance in coupled quantum wells

Spin Injection–Extraction Processes in Metallic and Semiconductor Heterostructures

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