Investigation of gate leakage current in TFET: A semi-numerical approach

Vacuum Tunneling Transistor with Nano Vacuum Chamber for Harsh Environments

“…Sometimes, this tilted angle evaporation has been applied to form various structures. One example is the Spindt-type device, one of the key device structures for vacuum field emission. − The device uses this method to form a vertical sharp tip electrode for electron emission into a vacuum. ,− The tilted evaporation is used to form a very thin sacrificial layer for the lift-off process. The tilted angle evaporation has generally a poor step coverage and shadow effect, and we tried to use these in reverse for the nano vacuum sealing process.…”

“…The I gs level can be neglected, and it does not greatly affect device operation since it is too small compared with the drain current ( I ds ). The I gs is dependent on the position of the gate relative to the source and drain terminal which means it was affected by the overlap dimension of the source, drain, and gate. , The increased I gs causes device performance degradation and increases power consumption. To reduce the I gs , the vacuum tunneling transistor was fabricated with a small overlap dimension and the gate electrode was positioned in the center of the source and drain electrode with a symmetrical structure.…”