Investigation of Gallium Nitride Island Films on Sapphire Substrates via Scanning Electron Microscopy and Spectral Ellipsometry

Dedkova, A. A.; Nikiforov, M. O.; Mitko, S.; Kireev, V. Yu.

doi:10.1134/s1995078019020046

Cited by 3 publications

(1 citation statement)

References 6 publications

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“…Ellipsometry is conventionally used in microelectronics for transparent films thickness analysis [67][68][69]. The results of measurements of layers on a wafer before silicon etching from the back side are often used to define thickness, comprising the film membrane.…”

Section: Determination Of Initial Dimensions and Shape Of Membranesmentioning

confidence: 99%

Peculiarities of deformation of round thin-film membranes and experimental determination of their effective characteristics

et al. 2022

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The features of thin-film membranes, which are formed above round holes in silicon substrates using the Bosch-process are considered. The membrane has a complex shape due to the presence of the stress state of the initial films. The analysis of the dependence of the membrane deflection w on the supplied overpressure P is used to calculate the mechanical characteristics of the membranes. In this case, it is necessary to determine directly on the membrane its diameter, the thickness of the constituent layers, the change in the topography of the membrane surface over its entire area as the overpressure increases. Determination of the membrane diameter and the thicknesses of the constituent layers is shown by the example of p-Si*/SiNx/SiO2 and SiNx/SiO2/SiNx/SiO2 membranes. We used spectral ellipsometry, energy-dispersive X-ray spectroscopy, optical profilometry, optical microscopy. The influence of the peculiarities of the fixing conditions on the stress-strain state of membranes is shown, and the assessment is carried out by means of numerical modeling. A technique has been developed for measuring and calculating the mechanical characteristics of membranes that have an initial deflection. The calculation result is shown on the example of a membrane with an initial deflection of 2 μm --- SiNx/SiO2/SiNx/SiO2 and a membrane with an initial deflection of 30 μm --- Al/SiO2/Al. Keywords: stress, bulging method, films, thin-layer coating, film thickness, membrane, pressure blister test, residual stress, microelectromechanical systems, MEMS, silicon substrate, large deformations, strain, deflections, circular membrane, bulge testing.

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Section: Determination Of Initial Dimensions and Shape Of Membranesmentioning

confidence: 99%

Peculiarities of deformation of round thin-film membranes and experimental determination of their effective characteristics

et al. 2022

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Application of the Tikhonov Regularization Method in Problems of Ellipsometic Porometry of Low-K Dielectrics

2022

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In the development of promising ULIS scaling technologies, one of the key roles is played by porous dielectrics with a low permittivity used to isolate interconnects in a metallization system. Condensation of gaseous products in the pores of such films makes it possible to solve the most important problem that prevents the integration of such films, to carry out low-damage plasma etching. However, methods for studying porosity are also based on the study of the adsorption isotherm during condensation in film pores. Therefore, the study of adsorption in pores is one of the most important practical problems arising in the creation of dielectrics with a low permittivity and the study of low-damaging methods for their structuring. The method of ellipsometric porosimetry is an easy-to-implement and accurate approach for obtaining an adsorption isotherm; however, its further analysis and determination of the pore size distribution are reduced to solving an integral equation and is an ill-posed problem. In this paper, we propose to apply Tikhonov’s regularization method to solve it. The method is verified on model data and used to study a low-k dielectric sample with an initial thickness of 202 nm and a permittivity of 2.3 based on organosilicate glass.

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Study of Surface and Electrical Conductivity of Thin Metal Films of the Ni–Al System

et al. 2021

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Investigation of Gallium Nitride Island Films on Sapphire Substrates via Scanning Electron Microscopy and Spectral Ellipsometry

Cited by 3 publications

References 6 publications

Peculiarities of deformation of round thin-film membranes and experimental determination of their effective characteristics

Peculiarities of deformation of round thin-film membranes and experimental determination of their effective characteristics

Application of the Tikhonov Regularization Method in Problems of Ellipsometic Porometry of Low-K Dielectrics

Study of Surface and Electrical Conductivity of Thin Metal Films of the Ni–Al System

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