INVESTIGATION OF Zr_xLa_1-xO_y NANOCRYSTALLITES IN METAL–HIGH-k OXIDE–SILICON-TYPE NONVOLATILE MEMORY DEVICES

Abstract

To investigate characterization of ZrxLa 1−x Oy nanocrystallites as a buffer oxide in forming the metal-oxide-semiconductor field effect transistors (MOSFETs) structure, we synthesized ZrxLa 1−x Oy nanocrystallites by sol-gel method. Moreover, from the solution prepared, thin films on silicon wafer substrates have been realized by "dipcoating" with a pulling out speed of 5 cm min −1 . The structure, morphology, electrical properties of thin film was examined by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM) techniques. Electrical property characterization was performed with metal-oxide-semiconductor (MOS) structures through capacitance-voltage (C-V) and current density-voltage (J-V) measurements. The leakage current density was below 1.0 × 10 −6 A/cm 2 at 1 MV/cm. Keywords: Nanotransistor; metal-oxide-semiconductor field effect transistors; High-k dielectric; sol-gel method. * Corresponding author. 1250191-1 Int. J. Mod. Phys. B 2012.26. Downloaded from www.worldscientific.com by GEORGE WASHINGTON UNIVERSITY on 02/03/15. For personal use only.

HIGH-k GATE DIELECTRIC: AMORPHOUS Ta/La2O3 FILMS GROWN ON Si AT LOW PRESSURE

“…10 This problem allows for higher Schottky emission and tunneling currents. 11 Therefore, a material with appropriate permittivity (preferably 25-30) must be searched for. Many metal oxides with dielectric constant higher than SiO 2 have been investigated, such as Ta 16 Further, to achieve a better alternative material, some researchers prepared another case of gate dielectrics where a rare earth oxide was doped to another rare earth oxide, such as Zr x La 1Àx O y , 9 SrTiO 3 , 6 LaAlO 3 17 and Hf x Al 1Àx O.…”