Abstract:By using higher acceleration energies than the displacement energy of Mo atoms, the electron irradiation on the layered MoS2 single crystals is found to be an effective and simple method to induce the diamagnetic to ferromagnetic phase transition persisting up to room temperature. The easy axis can be controllable by regulating the electron dose and the acceleration energy. The ferromagnetic states are largely attributed to the strain around the vacancies.
“…Han et al [74] prepared single-crystalline MoS 2 lamellae with a thickness of 100 µm. The lamellae were electron-irradiated in ambient conditions at room temperature.…”
Section: Electron Irradiationmentioning
confidence: 99%
“…Han et al [74] investigated magnetism of electron-irradiated MoS 2 single crystals. The diamagnetic MoS 2 single crystals transformed into ferromagnetic state after irradiation up to room temperature, as shown in Figure 34.…”
Atom-thick two-dimensional materials usually possess unique properties compared to their bulk counterparts. Their properties are significantly affected by defects, which could be uncontrollably introduced by irradiation. The effects of electromagnetic irradiation and particle irradiation on 2H MoS 2 two-dimensional nanolayers are reviewed in this paper, covering heavy ions, protons, electrons, gamma rays, X-rays, ultraviolet light, terahertz, and infrared irradiation. Various defects in MoS 2 layers were created by the defect engineering. Here we focus on their influence on the structural, electronic, catalytic, and magnetic performance of the 2D materials. Additionally, irradiation-induced doping is discussed and involved.
“…Han et al [74] prepared single-crystalline MoS 2 lamellae with a thickness of 100 µm. The lamellae were electron-irradiated in ambient conditions at room temperature.…”
Section: Electron Irradiationmentioning
confidence: 99%
“…Han et al [74] investigated magnetism of electron-irradiated MoS 2 single crystals. The diamagnetic MoS 2 single crystals transformed into ferromagnetic state after irradiation up to room temperature, as shown in Figure 34.…”
Atom-thick two-dimensional materials usually possess unique properties compared to their bulk counterparts. Their properties are significantly affected by defects, which could be uncontrollably introduced by irradiation. The effects of electromagnetic irradiation and particle irradiation on 2H MoS 2 two-dimensional nanolayers are reviewed in this paper, covering heavy ions, protons, electrons, gamma rays, X-rays, ultraviolet light, terahertz, and infrared irradiation. Various defects in MoS 2 layers were created by the defect engineering. Here we focus on their influence on the structural, electronic, catalytic, and magnetic performance of the 2D materials. Additionally, irradiation-induced doping is discussed and involved.
“…Previous studies have indicated that the band structure of MoS 2 nanosheets could be modulated by either the TM dopants or the vacancy defects, ,− and the impurity levels induced by these two methods have a strong interaction with each other. , This is in analogy to the traditional ZnO and GaN-based dilute magnetic semiconductors, for which first-principles calculations and experiments have predicted that the strategies of codoping with cation–cation, anion–cation, and especially cation-defect can effectively regulate their magnetic properties. − Therefore, simultaneously introducing substitutional TM doping and vacancy defects should provide a chance to modulate the magnetism of MoS 2 nanosheets. Recently, there were studies that ion irradiation with low energy is a controllable and simple way to induce sulfur vacancies (V s ) into layered MoS 2 samples. − Moreover, because of the similar atomic radii of vanadium (1.32 Å) and Mo (1.36 Å) atoms, stable substitutional doping can be achieved without generating impurity phases under irradiation. Motivated by the above consideration, we anticipate that the V substitutionally doped MoS 2 nanosheets along with V s could be an effective strategy to modulate the magnetism of MoS 2 nanosheets.…”
The activation and
modulation of the magnetism of MoS2 nanosheets are critical
to the development of their application
in next-generation spintronics. Here, we report a synergetic strategy
to induce and modulate the ferromagnetism of the originally nonmagnetic
MoS2 nanosheets. A two-step experimental method was used
to simultaneously introduce substitutional V dopants and sulfur vacancy
(Vs) in the MoS2 nanosheet host, showing an
air-stable and adjustable ferromagnetic response at room temperature.
The ferromagnetism could be modulated by varying the content of Vs through Ar plasma irradiation of different periods, with
a maximum saturation magnetization of 0.011 emu g–1 reached at the irradiation time of 6 s (s). Experimental characterizations
and first-principles calculations suggest that the adjustable magnetization
is attributed to the synergetic effect of the substitutional V dopants
and Vs in modulating the band structure of MoS2 nanosheets, resulting from the strong hybridization between the
V 3d state and the Vs-induced impurity bands. This work
suggests that the synergetic effect of substitutional V atoms and
Vs is a promising route for tuning the magnetic interactions
in two-dimensional nanostructures.
“…Irradiation with protons, neutrons, electrons, and swift heavy ions has been shown to be an effective method in inducing and manipulating the magnetic and electronic properties of several advanced materials including graphite, MoS2 single crystals, 4H-SiC, LaMnO3, La0.9Ca0.1CoO3, carbon nanotubes, fullerenes, GaAs: Cr, MgO, and other materials . For instance, it has been shown that it is possible to introduce ferromagnetism in non-magnetic materials such as proton and electron irradiated MoS2 single crystals 1,14 ; proton irradiated graphite, fullerenes, TiO2, and 4H-SiC; and neutron irradiated MgO single crystals 2,3,12,13,16,18 . The radiation induced defects and vacancies were believed to generate ferromagnetism in the above materials.…”
Van der Waals (vdWs) crystals have attracted a great deal of scientific attention due to their interesting physical properties and widespread practical applications. Among all, CrSiTe3 (CST) is a ferromagnetic semiconductor with the Curie temperature (TC) of ~32 K. In this letter, we study the magnetic properties of bulk CST single crystal upon proton irradiation with the fluence of 1×10 18 protons/cm 2 . Most significantly, we observed an enhancement (23%) in the saturation magnetization from 3.9 µB to 4.8 µB, and is accompanied by an increase in coercive field (465-542 Oe) upon proton irradiation. Temperature dependent X-band electron paramagnetic resonance measurements show no additional magnetically active defects/vacancies that are generated upon proton irradiation. The findings from X-ray photoelectron spectroscopy and Raman measurements lead us to believe that modification in the spin-lattice coupling and introduction of disorder could cause enhancement in saturation magnetization. This work demonstrates that proton irradiation is a feasible method in modifying the magnetic properties of vdWs crystals, which represents a significant step forward in designing future spintronic and magneto-electronic applications. *
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