Investigation of electrical properties of individual GaN nanowire-based ferroelectric field effect transistor

Abstract

Ferroelectric field effect transistors (FeFETs) using individual GaN nanowire as the conducting channel and Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) thin film as the gate dielectric were fabricated, and their electrical properties were investigated. The curves of the transfer characteristics for the individual GaN nanowire-based FeFET are of counterclockwise hysteresis loops, as the gate voltage was swept from negative to positive and then back. The memory window is about 5 V, and an on/off current ratio is up to 10 3 at zero gate voltage, indicating the feasibility of one-bit ferroelectric memory. The physical mechanism for the memory effect could be attributed to the reversible carrier concentration in individual GaN nanowire, which is modulated by the switchable remnant polarization of PZT thin film. The results may be helpful for the potential application of GaN nanowire in nonvolatile memory. 1 Introduction Semiconductor nanowires are promising candidates for applications throughout the fields ranging from electronics and optoelectronics to energy conversion and spintronics, for instance as field effect transistor (FET), laser, sensor, photovoltaic device, and bioscience device [1][2][3]. Nanowires are particularly attractive due to their unique electrical and optical properties such as their good transportation of charge carriers, large surfaceto-volume ratio, and high crystalline quality [4]. Moreover, they are suitable for increasing the area density of device cells and reducing the operating voltage effectively due to its unique properties that is the small dimension. As a result, the power consumption can be lowered to about several nJ [5]. In particular, GaN nanowire is one of the most important III-V semiconductor nanowire for electronic and optoelectronic applications, owing to its superior properties such as high crystalline quality, large energy bandgap (E g % 3.5 eV), high saturation velocity, and quantum confinement effect [1,6,7]. Thus, it has great potential for realizing next generation nanodevices.The ferroelectric field effect transistor (FeFET) using ferroelectric material as a dielectric layer in a metal-oxidesemiconductor (MOS) FET structure has attracted a great

Effect of spin-orbit coupling on spin transport at graphene/transition metal interface

“…However, the spin transport through a spin transistor mainly limited by the quality of the ferromagnetic source/drain contacts. To achieve a good spin transistor, the ferromagnetic contacts should be of good quality to reduce the destruction of injected spins at the contacts . In our early work, we have shown that the created potential barrier and anti‐ferromagnetic coupling at the graphene/TM interface reduce the magnetoresistance behavior due to destruction of injected spins at the contacts .…”

Nonvolatile operation of vertical ferroelectric gate-all-around nanowire transistors

“…The large polarization of ferroelectrics enables various materials as the channel, including Si, [4][5][6] Ge, 7) GaAs, 8) La 1.99 Sr 0.01 CuO 4 , 9) SrRuO 3 , 10) indium tin oxide, 11,12) indium gallium zinc oxide, 13) ZnO, [14][15][16] VO 2 , 17) and GaN. 18) After Böscke et al 19) and J. Müller et al 20) demonstrated ferroelectricity in Si-doped HfO 2 and Zr 0.5 Hf 0.5 O 2 ultrathin films, ferroelectric HfO 2 and its application to FGTs with a HfO 2 -based ferroelectric gate and a bulk Si channel have been intensively studied because of the compatibility with Si-CMOS technology and its scalability to technology nodes below 45 nm. 2,3,21,22) For example, in 2013, nonvolatile memory operation of an FGT with a 10 nm-thick HfO 2 layer fabricated using 28 nm technology was reported.…”

“…However, because of the difficulty and complexity of the fabrication process, most previous studies on FGTs with an NW channel have used a horizontal configuration in which NWs were horizontally placed between the source and drain electrodes on a ferroelectric film, similar to the structures of thin-film transistors. 6,15,17,18,25) The horizontal NWFGTs demonstrated nonvolatile modulation of the channel conductance by the ferroelectric gate underneath the NW channel, indicating that FGNWTs have potential applications in nonvolatile memory. However, their lateral dimensions were quite large; for example, the channel length of our NWFGTs was 5 or 10 μm.…”

Quantum Mechanical Analysis of GaN Nanowire Transistor for High Voltage Applications

“…Chen et.al. [19], investigated on the electrical properties of individual GaN nanowire based ferroelectric FETs. Mussener et et.…”